The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric

doi:10.1088/1674-1056/20/12/127204

Abstract A 4H-silicon carbide metal-insulator-semiconductor structure with ultra-thin Al₂O₃ as the gate dielectric, deposited by atomic layer deposition on the epitaxial layer of a 4H-SiC (0001) 8⁰N-/N+ substrate, has been fabricated. The experimental results indicate that the prepared ultra-thin Al₂O₃ gate dielectric exhibits good physical and electrical characteristics, including a high breakdown electrical field of 25 MV/cm, excellent interface properties (1×10¹⁴ cm^-2) and low gate-leakage current (I_G = 1 × 10^-3 A/cm^-2@E_ox = 8 MV/cm). Analysis of the current conduction mechanism on the deposited Al₂O₃ gate dielectric was also systematically performed. The confirmed conduction mechanisms consisted of Fowler-Nordheim (FN) tunneling, the Frenkel-Poole mechanism, direct tunneling and Schottky emission, and the dominant current conduction mechanism depends on the applied electrical field. When the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al₂O₃ is 1.4 eV, which can meet the requirements of silicon carbide metal-insulator-semiconductor transistor devices.

Keywords: Al₂O₃ 4H-silicon carbide metal-insulator-semiconductor capacitor gate leakage current C-V characteristics

Received: 28 March 2011
Revised: 12 October 2011
Accepted manuscript online:

PACS:	72.80.Sk	(Insulators)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the 2010 School Fundamental Scientific Research Fund of Xidian University (Grant No. K50510250008).

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Liu Li(刘莉), Yang Yin-Tang(杨银堂), and Ma Xiao-Hua(马晓华) The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric 2011 Chin. Phys. B 20 127204

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The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric

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The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al₂O₃ as the gate dielectric