Effect of E × B electron drift and plasma discharge in dc magnetron sputtering plasma
Sankar Moni Borah,Arup Ratan Pal,Heremba Bailung,andJoyanti Chutia†
Plasma Physics Laboratory, Material Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Guwahati 781035, Assam, India
Abstract Study of electron drift velocity caused by E×B motion is done with the help of a Mach probe in a dc cylindrical magnetron sputtering system at different plasma discharge parameters like discharge voltage, gas pressure and applied magnetic field strength. The interplay of the electron drift with the different discharge parameters has been investigated. Strong radial variation of the electron drift velocity is observed and is found to be maximum near the cathode and it decreases slowly with the increase of radial distance from the cathode. The sheath electric field, E measured experimentally from potential profile curve using an emissive probe is contributed to the observed radial variation of the electron drift velocity. The measured values of the drift velocities are also compared with the values from the conventional theory using the experimental values of electric and magnetic fields. This study of the drift velocity variation is helpful in providing a useful insight for determining the discharge conditions and parameters for sputter deposition of thin film.
Fund: Project supported by the Council of Scientific and Industrial Research–Senior Research Fellowship, Government of India grant (Award No. 9/835(6)/2008/EMR-I).
Cite this article:
Sankar Moni Borah,Arup Ratan Pal,Heremba Bailung,andJoyanti Chutia Effect of E × B electron drift and plasma discharge in dc magnetron sputtering plasma 2011 Chin. Phys. B 20 014701
[1]
Borah S M, Bailung H, Pal A R and Chutia J 2008 J. Phys. D: Appl. Phys. 41 195205
[2]
Borah S M, Pal A R, Bailung H and Chutia J 2008 Appl. Surf. Sci. 254 5760
[3]
Wendt A E, Lieberman M A and Meuth H 1988 J. Vac. Sci. Technol. A 6 1827
[4]
Sheridan T E, Goeckner M J and Goree J 1990 J. Vac. Sci. Technol. A 8 30
[5]
Riemann K U 1992 Phys. Fluids B 4 2693
[6]
Kakati H, Pal A R, Bailung H and Chutia J 2006 J. Appl. Phys. 100 083303
[7]
Oksuz L and Hershkowitz N 2004 Plasma Sources Sci. Technol. 13 263
[8]
Kato I, Nakano Y and Yamaguchi N 2000 Jpn. J. Appl. Phys. Part 1-Regular Papers Short Notes Rev. Papers 39 6404
[9]
Fisher E R 2002 Plasma Sources Sci. Technol. (Special Issue) 11 A105
[10]
Koltai L, Hildebrandt D, Bakos J S and Bachmann P 1990 J. Nucl. Mater. 176 1044
[11]
Hutchinson I H 1988 Phys. Rev. A 37 4358
[12]
Chung K S and Hutchinson I H 1988 Phys. Rev. A bf 38 4721
[13]
Gunn J P, Boucher C, Devynck P, Duran I, Dyabilin K, Horacek J, Hron M, Stokel J, Van Oost G, Van Goubergen H and Zacek F 2001 it Phys. Plasmas 8 1995
[14]
Pal A R, Chutia J and Bailung H 2004 Phys. Plasmas bf 11 4719
[15]
Adhikary N C, Pal A R, Bailung H and Chutia J 2006 Phys. Lett. A 350 380
[16]
Sheridan T E, Goeckner M J and Goree J 1998 J. Vac. Sci. Technol. A 16 2173
[17]
Bradley J W, Thompson S and Aranda Gonzalvo Y 2001 Plasma Sources Sci. Technol. 10 490
[18]
Rossnagel S M and Kaufman H R 1987 J. Vac. Sci. Technol. A 5 88
[19]
Rossnagel S M and Kaufman H R 1987 J. Vac. Sci. Technol. A 5 2276
[20]
Fujita H, Yagura S, Ueno H and Nagano M 1986 J. Phys. D: Appl. Phys. 19 1699
[21]
Kakati H, Pal A R, Bailung H and Chutia J 2007 J. Phys. D: Appl. Phys. 40 6865
[22]
Yamada M and Hendel H W 1978 Phys. Fluids bf 21 1555
[23]
Coakley P, Hershkowitz N, Hubbard R and Joyce G 1978 Phys. Rev. Lett. 40 230
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