Band structure and absorption coefficient in GaN/AlGaN quantum wires

doi:10.1088/1674-1056/19/7/077101

Abstract The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density, and the optical gain caused by interband transition is polarization anisotropic. For the photon energy near 1.55 eV, we can obtain relatively large peak gain. The calculations support the previous results published in the recent literature.

Keywords: absorption coefficient gain polarization anisotropic quantum wires

Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	78.67.Lt	(Quantum wires)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
	71.18.+y	(Fermi surface: calculations and measurements; effective mass, g factor)
	73.63.Nm	(Quantum wires)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405), and the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068 and 60644004).

Cite this article:

Yao Wen-Jie(姚文杰), Yu Zhong-Yuan(俞重远), and Liu Yu-Min(刘玉敏) Band structure and absorption coefficient in GaN/AlGaN quantum wires 2010 Chin. Phys. B 19 077101

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