Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions

doi:10.1088/1674-1056/19/6/067302

Abstract Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions are investigated in this paper. The finite element method is used. Electronic energy levels are calculated by solving the three-dimensional effective mass Schr?dinger equation including a strain modified confinement potential and piezoelectric effects. The difference in electronic structure between quantum dots grown along the (111) direction and the (011) direction are compared. The cubic and truncated pyramidal shaped quantum dots are adopted.

Keywords: quantum dot electronic structure piezoelectric effect

Received: 05 August 2009
Accepted manuscript online:

PACS:	77.65.-j	(Piezoelectricity and electromechanical effects)
	71.20.Nr	(Semiconductor compounds)
	73.21.La	(Quantum dots)
	73.63.Kv	(Quantum dots)
	81.07.Ta	(Quantum dots)
	71.18.+y	(Fermi surface: calculations and measurements; effective mass, g factor)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405) and the National Natural Science Foundation of China (Grant Nos. 60908028 and 60971068).

Cite this article:

Zhao Wei(赵伟), Yu Zhong-Yuan(俞重远), and Liu Yu-Min(刘玉敏) Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions 2010 Chin. Phys. B 19 067302

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Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions

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