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Chin. Phys. B, 2019, Vol. 28(1): 018102    DOI: 10.1088/1674-1056/28/1/018102

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

Ya-Chao Zhang(张雅超)1, Zhi-Zhe Wang(王之哲)2, Rui Guo(郭蕊)1, Ge Liu(刘鸽)1, Wei-Min Bao(包为民)3, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China

Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×1012 cm-2, together with a high electron mobility of 1229.5 cm2/V·s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 μm×2 μm scan area. In addition to the improved properties, the enhancement-mode metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs) processed on the heterostructures not only exhibited a high threshold voltage (VTH) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 mA/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.

Keywords:  InAlGaN      enhancement-mode      metal-oxide-semiconductor high electron mobility transistor      threshold voltage  
Received:  25 August 2018      Revised:  22 October 2018      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  81.05.Ea (III-V semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  

Project supported by the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201700184) and the National Key Research and Development Program of China (Grant Nos. 2016YFB0400105 and 2017YFB0403102).

Corresponding Authors:  Ya-Chao Zhang     E-mail:
About author:  73.40.Kp; 81.05.Ea; 85.30.De

Cite this article: 

Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition 2019 Chin. Phys. B 28 018102

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