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Chin. Phys. B, 2016, Vol. 25(3): 037306    DOI: 10.1088/1674-1056/25/3/037306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

Qing-Wen Song(宋庆文)1,2, Xiao-Yan Tang(汤晓燕)2, Yan-Jing He(何艳静)2, Guan-Nan Tang(唐冠男)2,Yue-Hu Wang(王悦湖)2, Yi-Meng Zhang(张艺蒙)2, Hui Guo(郭辉)2, Ren-Xu Jia(贾仁需)2,Hong-Liang Lv(吕红亮)2, Yi-Men Zhang(张义门)2, Yu-Ming Zhang(张玉明)2
1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2×1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2· V-1· s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs.
Keywords:  metal-oxide-semiconductor field-effect transistors      4H-SiC      field-effect mobility      oxidation process  
Received:  17 September 2015      Revised:  26 October 2015      Accepted manuscript online: 
PACS:  73.40.-c (Electronic transport in interface structures)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.Le (Other inorganic semiconductors)  
Fund: Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).
Corresponding Authors:  Qing-Wen Song, Xiao-Yan Tang     E-mail:  qwsong@xidian.edu.cn;xytang@mail.xidian.edu.cn

Cite this article: 

Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors 2016 Chin. Phys. B 25 037306

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