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Chin. Phys. B, 2015, Vol. 24(9): 097304    DOI: 10.1088/1674-1056/24/9/097304

Recovery of PMOSFET NBTI under different conditions

Cao Yan-Rong (曹艳荣)a b, Yang Yi (杨毅)a, Cao Cheng (曹成)a, He Wen-Long (何文龙)a, Zheng Xue-Feng (郑雪峰)b, Ma Xiao-Hua (马晓华)c, Hao Yue (郝跃)b
a School of Mechano-electric Engineering, Xidian University, Xi'an 710071, China;
b Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
c School of Technical Physics, Xidian University, Xi'an 710071, China
Abstract  Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal-oxide-semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.
Keywords:  negative bias temperature instability (NBTI)      P-type metal-oxide-semiconductor field effect transistor      recovery  
Received:  09 July 2014      Revised:  01 April 2015      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61404097, 61334002, 61106106, and 61176130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140415).
Corresponding Authors:  Cao Yan-Rong     E-mail:

Cite this article: 

Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Recovery of PMOSFET NBTI under different conditions 2015 Chin. Phys. B 24 097304

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