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Analysis of heating effect on the process of high deposition rate microcrystalline silicon |
Zhang Xiao-Dan(张晓丹)†,Zhang He(张鹤),Wei Chang-Chun(魏长春), Sun Jian(孙建), Hou Guo-Fu(侯国付), Xiong Shao-Zhen(熊绍珍),Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) |
Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology (Nankai University), Ministry of Education, Tianjin 300071, China |
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Abstract A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.
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Received: 21 June 2009
Revised: 30 July 2009
Accepted manuscript online:
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PACS:
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81.05.Cy
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(Elemental semiconductors)
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68.55.A-
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(Nucleation and growth)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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Fund: Project supported by Hi-Tech
Research and Development Program of China (Grant Nos.~2007AA05Z436
and 2009AA050602), Science and Technology Support Project of Tianjin
(Grant No. 08ZCKFGX03500), National Basic Research Program of China
(Grant Nos.~2006CB202602 and 2006CB202603), National Natural Science
Foundation of China (Grant No.~60976051), International Cooperation
Project between China--Greece Government (Grant Nos.~2006DFA62390
and 2009DFA62580), and Program for New Century Excellent Talents in
University of China (Grant No.~NCET-08-0295). |
Cite this article:
Zhang Xiao-Dan(张晓丹),Zhang He(张鹤),Wei Chang-Chun(魏长春), Sun Jian(孙建), Hou Guo-Fu(侯国付), Xiong Shao-Zhen(熊绍珍),Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) Analysis of heating effect on the process of high deposition rate microcrystalline silicon 2010 Chin. Phys. B 19 038101
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[1] |
Suzuki S, Kondo M and Matsuda A 2002 Solar Energy Materialsand Solar Cells 74 489
|
[2] |
Graf U, Meier J, Kroll U, Bailat J, Droz C, Vallat-SauvainEvelyne and Shah Arvind 2003 Thin Solid Films 427 37
|
[3] |
Strahm B, Howling A A, Sansonnens L, Hollenstein C, Kroll U,Meier J, Ellert C, Feitknecht L and Balif C 2007 Solar EnergyMaterials & Solar Cells 91 495
|
[4] |
Zhang X D, Zhao Y, Zhu F, Sun J, Wei C C, Hou G F, Geng XH and Xiong S Z 2004 Chin. Phys. 13 1370
|
[5] |
Gao Y T, Zhang X D, Zhao Y, Sun J, Zhu F and Wei C C 2006 ActaPhys. Sin. 55 1497 (in Chinese)
|
[6] |
Kondo M, Fukawa M, Guo L and Matsuda A 2000 J. Non-Cryst.Solids 266--269 84
|
[7] |
Mai Y, Klein S, Carius R, Wolff J, Lambertz A, Finger F and Geng X2005 J. Appl. Phys. 97 114913
|
[8] |
Gordijn A, Vanecek M, Goedheer W J, Rath J K and Schropp R E I2006 Jpn. J. Appl. Phys. 45 6166
|
[9] |
Roschek T, Repmann T, Müller J, Rech B and Wagner H 2002 J. Vac. Sci. Technol. A Vac. Surf.Films 20 492
|
[10] |
Niikura C, Kondo M and Matsuda A 2004 J. Non-Cryst. Solids 338--340 42
|
[11] |
van de Donker M N, Schmitz R, Appenzeller W, Rech B, Kessels WM M and van de Sanden M C M 2006 Thin Solid Films 511--512 562
|
[12] |
Matsuda A 1983 J. Non-Cryst. Solids 59--60 767
|
[13] |
Nasuno Y, Kondo M and Matsuda A 2001 Appl. Phys. Letts. 78 2330
|
[14] |
Zhao Y, Zhang X D, Zhu F, Gao Y T, Wei C C, Xue J M, Ren H Z, Zhang D K, Hou G F, Sun J and Geng X H 2005 15th International Photovoltaic Science & Engineering Conference (PVSEC-15) Shanghai, China, p65
|
[15] |
Usui M and Kikuchi M 1979 J. Non-Cryst. Solids 34 1
|
[16] |
Ray S, Mukhopadhyay S, Jana T and Carius R 2002 J. Non-Cryst.Solids 299--302 761
|
[17] |
Keppner H, Meier J, Torres P, Fisher D and Shah A 1999 Appl.Phys. A 69 169
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