The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

doi:10.1088/1674-1056/19/8/087206

Abstract The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy, spectroscopic ellipsometer and atomic force microscopy. It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH₄ and the amorphous induction of glass surface during the initial ignition process, and growth of the incubation layer can be suppressed and uniform μc-Si:H phase is generated by the application of delayed initial SiH₄ density and silane profiling methods.

Keywords: microcrystalline silicon thin film amorphous incubation layer

Received: 08 January 2010
Revised: 24 February 2010
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	52.77.Dq	(Plasma-based ion implantation and deposition)
	68.55.-a	(Thin film structure and morphology)
	68.55.A-	(Nucleation and growth)
	78.30.Am	(Elemental semiconductors and insulators)
	78.66.Db	(Elemental semiconductors and insulators)

Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB202601) and the Natural Science Research Program of the Education Bureau of Henan Province of China (Grant No. 2009A140007).

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Chen Yong-Sheng(陈永生), Xu Yan-Hua(徐艳华), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Yang Shi-E(杨仕娥), and Gao Xiao-Yong(郜小勇) The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions 2010 Chin. Phys. B 19 087206

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The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

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