Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

doi:10.1088/1674-1056/19/12/127303

Abstract This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated on silicon-on-aluminum nitride (SOAN) substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.

Keywords: electrical characteristics self-heating effect SiGe-on insulator SiGe-silicon-on-aluminum nitride

Received: 26 February 2010
Revised: 02 June 2010
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Fundamental Research Funds for the Central Universities (Grant No. 200807010010).

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Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃) Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET 2010 Chin. Phys. B 19 127303

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Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

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