Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

doi:10.1088/1674-1056/20/2/027202

Abstract The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μ m SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip-level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.

Keywords: high electron mobility transistor self-heating effect structure function reliability

Received: 06 September 2010
Revised: 20 September 2010
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Ns	(Metal-nonmetal contacts)

Fund: Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092005), the National High Technology Research and Development Program of China (Grant No. 2009AA032704), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091103110006).

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Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生) Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method 2011 Chin. Phys. B 20 027202

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Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

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