Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

doi:10.1088/1674-1056/19/2/027502

Abstract This paper reports that Zn_0.97Mn_0.03O thin films have been prepared by radio-frequency sputtering technology followed by rapid thermal processing in nitrogen and oxygen ambient respectively. Magnetic property investigation indicates that the films are ferromagnetic and that the Curie temperature (T_c) is over room temperature. It is observed that the saturation magnetization of the films increases after annealing in nitrogen ambience but decreases after annealing in oxygen. Room temperature photoluminescence spectra indicate that the amount of defects in the films differs after annealing in the different ambiences. This suggests that the ferromagnetism in Zn_0.97Mn_0.03O films is strongly related to the defects in the films.

Keywords: magnetic semiconductor ZnO photoluminescence

Received: 05 December 2008
Revised: 01 April 2009
Accepted manuscript online:

PACS:	75.70.Ak	(Magnetic properties of monolayers and thin films)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
	75.30.Kz	(Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))
	75.60.Ej	(Magnetization curves, hysteresis, Barkhausen and related effects)
	75.50.Pp	(Magnetic semiconductors)
	78.55.Et	(II-VI semiconductors)

Fund: Project supported by the National Key Program for Fundamental Research Development Plan of China (973 Project).

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Liu Xing-Chong(刘兴翀), Lu Zhi-Hai(陆智海), and Zhang Feng-Ming(张凤鸣) Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films 2010 Chin. Phys. B 19 027502

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Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

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