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Chin. Phys. B, 2010, Vol. 19(2): 027501    DOI: 10.1088/1674-1056/19/2/027501
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Enhancement of ferromagnetism in polycrystalline Si0.965Mn0.035:B films by boron plasma treatment

Liu Xing-Chong(刘兴翀)a), Huang Xiao-Ping(黄小平)b), and Zhang Feng-Ming(张凤鸣)b)
a School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Nanjing University, Nanjing 210093, China
Abstract  This paper reports that the polycrystalline Si0.965Mn0.035:B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization.The polycrystalline thin films consist of two ferromagnetic phases.The low temperature ferromagnetic phase with Curie temperature (Tc) of about 50 K is due to the Mn4Si7 phase in the films, while the high temperature one (Tc~ 250 K) is resulted from the incorporation of Mn into silicon. The films are treated by boron plasma excited with the approach of microwave plasma enhanced chemical vapor deposition for 40 minutes. After plasma treatment, it is observed that no extra magnetic phases or magnetic complexes exist in the films, while both the high temperature saturation magnetization and the hole concentration in the films increase. The obvious correlation between the magnetic properties and the electrical properties of the polycrystalline Si0.965Mn0.035:B films suggests that the hole carriers play an important role in Si:Mn diluted magnetic semiconductors.
Keywords:  magnetic semiconductors      silicon      thin films  
Received:  15 January 2009      Revised:  11 April 2009      Accepted manuscript online: 
PACS:  75.70.Ak (Magnetic properties of monolayers and thin films)  
  75.50.Pp (Magnetic semiconductors)  
  75.50.Dd (Nonmetallic ferromagnetic materials)  
  52.77.-j (Plasma applications)  
  75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
Fund: Project supported by the National Key Program for Fundamental Research Development Project of China (973 Project).

Cite this article: 

Liu Xing-Chong(刘兴翀), Huang Xiao-Ping(黄小平), and Zhang Feng-Ming(张凤鸣) Enhancement of ferromagnetism in polycrystalline Si0.965Mn0.035:B films by boron plasma treatment 2010 Chin. Phys. B 19 027501

[1] Park J H, Vescovo E, Kim H J, Kwon C, Ramesh R and Venkatesan T 1998 Nature(London) 392 794
[2] Prinz G A 1998 Science 282 1660
[3] Wolft S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S,Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science 2941448
[4] Zhu H J, Ramsteiner M, Kostial H, Wassermeier M, Schonherr H Pand Ploog K H 2001 Phys. Rev. Lett. 87 016601
[5] Ball P 2002 Nature(London) 404 918
[6] Bolduc M, Affouda C A, Stollenwerk A, Huang M B, Ramos F G,Agnello G and Labella V P 2005 Phys. Rev. B 71 033302
[7] Bandaru P R, Park J, Lee J S, Tang Y J, Chen L H, Jin S, Song S A and Brien J R O 2006 Appl. Phys. Lett. 89 112502
[8] Kwon Y H, Kang T W, Cho H Y and Kim T W 2005 Solid State Comm. 136 257
[9] Sobolev N A, Oliveira M A, Amaral V S, Neves A, Carmo M C, WeschW, Picht O, Wendler E, Kaiser U and Heinrich J 2006 Mater. Sci.Eng. B 126 148
[10] Lin H T, Huang W J, Wang S H, Lin H H and Chin T S 2008 J. Phys. : Condens. Matter 20095004
[11] Ko V, Teo K L, Liew T, Chong T C, MacKenzie M, MacLaren I andChapman J N 2008 J. Appl. Phys. 104 033912
[12] Wu H W, Tsai C J and Chen L J 2007 Appl. Phys. Lett. 90 043121
[13] Kim H M, Kim N M, Park C S, Yuldashev S U, Kang T W and ChungK S 2003 Chem. Mater. 15 3964
[14] Liu X C, Wang J F, Lu Z L, Lv L Y, Wu X S, Zhang F M and Du YW 2006 J. Appl. Phys. 100 073903
[15] Zhang F M, Liu X C, Gao J, Wu X S and Du Y W 2004 Appl.Phys. Lett. 85 786
[16] Chiu S H, Hsu H S and Huang J C A 2008 J. Appl. Phys. 10 3 07D110
[17] Gottlieb U, Sulpice A, Lambert-Andron B and Laborde O 2003 J. Alloys Compounds 361 13.
[18] Yamada M, Goto T and Kanomata T 2003 J. Alloys Compounds 364 37
[19] Zhu H, Ni C Y, Zhang F M, Du Y W and Xiao J Q 2005 J. Appl. Phys. 97 10M512
[20] Khmelevskyi S and Mohn P 2000 Solid State Comm. 113 509
[21] Yeh C Y, Lu Z W, Froyen S and Zunger A 1992 Phys. Rev. B 46 10086
[22] Jayakumar O D, Salunke H G, Kadam R M, Mohapatra M, Yaswant Gand Kulshreshtha S K 2006 Nanotechnology 17 1278
[23] Norton D P, Pearton S J, Hebard A F, Theodoropoulou N and BoatnerL A 2003 Appl. Phys. Lett. 82 239
[24] Theodoropoulou N, Febard A F, Overberg M E, Abernathy C R,Pearton S J, Chu S N G and Wilson R G 2002 Phys. Rev.Lett. 89 107203
[25] Seo W S, Jo H H, Kim B, Oh S J and Park J T 2004 Angew. Chem. 43 1115
[26] Gao Y H, Bao Y P, Beerman M, Yasuhara A and Shindo D 2004 Appl. Phys. Lett. 84 3361
[27] Lee Y H, Han T C and Huang J C A 2003 J. Appl. Phys. 93 8462
[28] Dietl T, Ohno H and Matsukura F 2001 Phys. Rev. B 63 195205
[29] Jungwirth T, Lee B and MacDonald A H 2001 Physica E 10 153
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