Enhancement of ferromagnetism in polycrystalline Si0.965Mn0.035:B films by boron plasma treatment
Liu Xing-Chong(刘兴翀)a)†, Huang Xiao-Ping(黄小平)b), and Zhang Feng-Ming(张凤鸣)b)
a School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Nanjing University, Nanjing 210093, China
Abstract This paper reports that the polycrystalline Si0.965Mn0.035:B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization.The polycrystalline thin films consist of two ferromagnetic phases.The low temperature ferromagnetic phase with Curie temperature (Tc) of about 50 K is due to the Mn4Si7 phase in the films, while the high temperature one (Tc～ 250 K) is resulted from the incorporation of Mn into silicon. The films are treated by boron plasma excited with the approach of microwave plasma enhanced chemical vapor deposition for 40 minutes. After plasma treatment, it is observed that no extra magnetic phases or magnetic complexes exist in the films, while both the high temperature saturation magnetization and the hole concentration in the films increase. The obvious correlation between the magnetic properties and the electrical properties of the polycrystalline Si0.965Mn0.035:B films suggests that the hole carriers play an important role in Si:Mn diluted magnetic semiconductors.
(Magnetization curves, hysteresis, Barkhausen and related effects)
Fund: Project supported by the National
Key Program for Fundamental Research Development Project of China
(973 Project).
Cite this article:
Liu Xing-Chong(刘兴翀), Huang Xiao-Ping(黄小平), and Zhang Feng-Ming(张凤鸣) Enhancement of ferromagnetism in polycrystalline Si0.965Mn0.035:B films by boron plasma treatment 2010 Chin. Phys. B 19 027501
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