Generation of 10fs Ti:sapphire laser at repetition rate of 525MHz and measurement of carrier-envelope phase frequency
Zhang Wei(张炜), Han Hai-Nian(韩海年), Teng Hao(滕浩), and Wei Zhi-Yi(魏志义)†
Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract This paper presents a Kerr-lens mode-locked Ti:sapphire laser at the repetition rate of 525 MHz, stable laser pulse as short as 10 fs with average output power of 480 mW is obtained. By injecting the pulse into photonics crystal fibre, octave-spanning spectrum covered from 500 to 1050 nm is generated, carrier-envelope phase frequency with signal-to-noise ratio of 31dB is measured, which paves the way for the generation of a compact frequency comb.
Received: 10 July 2008
Revised: 21 August 2008
Accepted manuscript online:
PACS:
42.55.Rz
(Doped-insulator lasers and other solid state lasers)
Fund: Project partly supported by
National Natural Science Foundation of China (Grant Nos 60490281 and
60621063 ) and National Basic Research Program of China (Grant No
2007CB815104).
Cite this article:
Zhang Wei(张炜), Han Hai-Nian(韩海年), Teng Hao(滕浩), and Wei Zhi-Yi(魏志义) Generation of 10fs Ti:sapphire laser at repetition rate of 525MHz and measurement of carrier-envelope phase frequency 2009 Chin. Phys. B 18 1105
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