Metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires
Fu Xiu-Li(符秀丽)a)†, Peng Zhi-Jian(彭志坚)b), Tang Wei-Hua(唐为华)c), and Guo Xi(郭熹)c)
a Faculty of Science, Beijing University of Posts and Telcommunications, Beijing 100876, China; b School of Engineering and Technology, China University of Geosciences, Beijing 100083, China; c Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
Abstract We report on the synthesis and the characterisation of metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires, which are grown by thermal evaporation of the mixture of CdS and Cr. The growth of the hybrids is attributed to the decomposition of CdS at high temperature and the strain relieving that arises mainly from the lattice mismatch between Cd and CdS. Temperature dependence of zero-field resistance of single nanohybrid indicates that the as-produced Cd/CdS nanohybrid undergoes a metal--semiconductor transition as a natural consequence of hybrid from metallic Cd and semiconducting CdS. The metal/semiconductor hybrid property provides a promising basis for the development of novel nanoelectronic devices.
Received: 13 February 2009
Revised: 15 April 2009
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60806005).
Cite this article:
Fu Xiu-Li(符秀丽), Peng Zhi-Jian(彭志坚), Tang Wei-Hua(唐为华), and Guo Xi(郭熹) Metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires 2009 Chin. Phys. B 18 4460
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