Please wait a minute...
Chin. Phys. B, 2009, Vol. 18(10): 4456-4459    DOI: 10.1088/1674-1056/18/10/058
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor

Cao Quan-Jun(曹全君)a), Zhang Yi-Men(张义门)b), and Jia Li-Xin(贾立新)a)
a Institute of Electronic Science and Technology, College of Information Engineering, Zhejiang University of Technology, Hangzhou 310014, China; b School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H--SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H--SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H--SiC MESFETs device.
Keywords:  4H silicon carbide      metal semiconductor field effect transistor      drain induced barrier lowering effect      short channel  
Received:  21 December 2008      Revised:  13 March 2009      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project partly supported by National Defense Basic Research Program of China (Grant No 51327010101).

Cite this article: 

Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新) Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor 2009 Chin. Phys. B 18 4456

[1] Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application
Hai-Qing Xie(谢海情), Dan Wu(伍丹), Xiao-Qing Deng(邓小清), Zhi-Qiang Fan(范志强), Wu-Xing Zhou(周五星), Chang-Qing Xiang(向长青), and Yue-Yang Liu(刘岳阳). Chin. Phys. B, 2021, 30(11): 117102.
[2] A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
Shweta Tripathi. Chin. Phys. B, 2016, 25(10): 108503.
[3] Subthreshold behavior of AlInSb/InSb high electron mobility transistors
S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan. Chin. Phys. B, 2015, 24(7): 076105.
[4] A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
Shweta Tripathi. Chin. Phys. B, 2014, 23(11): 118505.
[5] A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures
Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌) . Chin. Phys. B, 2012, 21(5): 057304.
[6] Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chai ChangChun(柴常春), Song Kun(宋坤), and Chen-Bin(陈斌) . Chin. Phys. B, 2012, 21(3): 037303.
[7] New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chen Bin(陈斌), Chai Chang-Chun(柴常春), and Song Kun(宋坤) . Chin. Phys. B, 2012, 21(1): 017201.
[8] The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博). Chin. Phys. B, 2010, 19(10): 107301.
[9] Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs
Li Jin(李劲), Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博). Chin. Phys. B, 2010, 19(10): 107302.
[10] A new physics-based self-heating effect model for 4H-SiC MESFETs
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明). Chin. Phys. B, 2008, 17(12): 4622-4626.
[11] New aspects of HCI test for ultra-short channel n-MOSFET devices
Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Wang Jian-Ping(王剑屏), Cao Yan-Rong(曹艳荣), and Chen Hai-Feng(陈海峰). Chin. Phys. B, 2006, 15(11): 2742-2745.
[12] Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET
Tong Jian-Nong (童建农), Zou Xue-Cheng (邹雪城), Shen Xu-Bang (沈绪榜). Chin. Phys. B, 2004, 13(11): 1815-1819.
No Suggested Reading articles found!