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Chinese Physics, 2007, Vol. 16(10): 3108-3113    DOI: 10.1088/1009-1963/16/10/048
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

Yao Zhi-Tao(姚志涛), Sun Xin-Rui(孙新瑞), Xu Hai-Jun(许海军), and Li Xin-Jian(李新建)
Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Abstract  Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure, silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of $\sim$$10\mu$m. The film resistivity of ZnO/Si-NPA is measured to be $\sim$$8.9\Omega\cdot$cm by the standard four probe method. The lengthwise $I$-$V$ curve of ZnO/Si-NPA heterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.
Keywords:  silicon nanoporous pillar array (Si-NPA)      ZnO/Si-NPA heterostructure      thermionic process  
Received:  31 January 2007      Revised:  04 February 2007      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  68.55.A- (Nucleation and growth)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
  73.61.Ga (II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10574112).

Cite this article: 

Yao Zhi-Tao(姚志涛), Sun Xin-Rui(孙新瑞), Xu Hai-Jun(许海军), and Li Xin-Jian(李新建) Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array 2007 Chinese Physics 16 3108

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