Abstract The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or "truncated pyramid" are calculated and analysed. We use a method based on the Green function technique for calculating the strain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.
Received: 01 June 2004
Revised: 04 August 2004
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 90201003), the Programme from the Ministry of Education for Distinguished Young Teacher and the Foundation of Heilongjiang Province for the Returned Overseas Chinese Scholars
Cite this article:
Guo Ru-Hai (郭汝海), Shi Hong-Yan (时红艳), Sun Xiu-Dong (孙秀冬) Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots 2004 Chinese Physics 13 2141
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