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Acta Physica Sinica (Overseas Edition), 1998, Vol. 7(8): 613-617    DOI: 10.1088/1004-423X/7/8/009
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

OSCILLATORY INTERLAYER COUPLING WITH Cu AND Zr UNDERLAYER THICKNESS FOR Co/Cu MULTILAYERS

Zhao Tong-yun (赵同云)abc, Shan Zheng-sheng (单郑生)b, Shen Bao-gen (沈保根)a, Zhao Jian-gao (赵见高)a, D. J. Sellmyerb
a State Key Laboratory for Magnetism, Institute of Physics, Academia Sinica, Beijing 100080, China; b Behlen Laboratory of Physics and Center for Materials Research and Analysis, University of Nebraska, Lincoln, NE 68588-0113, USA; c Department of Physics, Wuhan University, Wuhan 430072, China
Abstract  Oscillatory behavior (with a period of about 9 nm) of antiferromagnetic coupling with the thicknesses of Cu and Zr underlayers is reported for sputtered Co(1 nm)/Cu(2.3 nm) multilayers. The related oscillation of magnetoresistance is also observed. Based on the analysis of X-ray diffraction patterns, the variation of crystallographic orientation and modulation period is proved not responsible to the phenomenon. But the underlayer strongly affects the growth orientation of multilayer.
Received:  02 December 1997      Revised:  25 February 1998      Accepted manuscript online: 
PACS:  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  68.65.Ac (Multilayers)  
  75.50.Ee (Antiferromagnetics)  
  75.47.Np (Metals and alloys)  
  68.55.-a (Thin film structure and morphology)  
Fund: Project supported in part by the U.S. National Sciences Foundation and the National Natural Science Foundation of China.

Cite this article: 

Zhao Tong-yun (赵同云), Shan Zheng-sheng (单郑生), Shen Bao-gen (沈保根), Zhao Jian-gao (赵见高), D. J. Sellmyer OSCILLATORY INTERLAYER COUPLING WITH Cu AND Zr UNDERLAYER THICKNESS FOR Co/Cu MULTILAYERS 1998 Acta Physica Sinica (Overseas Edition) 7 613

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