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Chin. Phys. B, 2022, Vol. 31(11): 117504    DOI: 10.1088/1674-1056/ac9048
Special Issue: TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B
TOPICAL REVIEW—Celebrating 30 Years of Chinese Physics B Prev   Next  

From microelectronics to spintronics and magnonics

Xiu-Feng Han(韩秀峰), Cai-Hua Wan(万蔡华), Hao Wu(吴昊), Chen-Yang Guo(郭晨阳), Ping Tang(唐萍), Zheng-Ren Yan(严政人), Yao-Wen Xing(邢耀文), Wen-Qing He(何文卿), and Guo-Qiang Yu(于国强)
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
Abstract  In this review, the recent developments in microelectronics, spintronics, and magnonics have been summarized and compared. Firstly, the history of the spintronics has been briefly reviewed. Moreover, the recent development of magnonics such as magnon-mediated current drag effect (MCDE), magnon valve effect (MVE), magnon junction effect (MJE), magnon blocking effect (MBE), magnon-mediated nonlocal spin Hall magnetoresistance (MNSMR), magnon-transfer torque (MTT) effect, and magnon resonant tunneling (MRT) effect, magnon skin effect (MSE), etc., existing in magnon junctions or magnon heterojunctions, have been summarized and their potential applications in memory and logic devices, etc., are prospected, from which we can see a promising future for spintronics and magnonics beyond micro-electronics.
Keywords:  magnon valve effect      magnon junction effect      magnon resonant tunneling effect      magnon-transfer torque effect  
Received:  18 June 2022      Revised:  02 September 2022      Accepted manuscript online:  08 September 2022
PACS:  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  75.76.+j (Spin transport effects)  
Fund: Project supported by the National Key Research and Development Program of China (Grants No. 2017YFA0206200), the National Natural Science Foundation of China (Grant Nos. 51831012 and 12134107), and the Beijing Natural Science Foundation (Grant No. Z201100004220006).
Corresponding Authors:  Xiu-Feng Han     E-mail:

Cite this article: 

Xiu-Feng Han(韩秀峰), Cai-Hua Wan(万蔡华), Hao Wu(吴昊), Chen-Yang Guo(郭晨阳), Ping Tang(唐萍), Zheng-Ren Yan(严政人), Yao-Wen Xing(邢耀文), Wen-Qing He(何文卿), and Guo-Qiang Yu(于国强) From microelectronics to spintronics and magnonics 2022 Chin. Phys. B 31 117504

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