Abstract In this paper, the crystallization behaviors and transport properties are investigated for a-Ge/Bi bilayers annealed at different temperatures. For 200nm/100nm bilayers, it is found that the orientations of Bi in the bilayers annealed at 200℃ and 340℃ are preferred, as well as the original one. But they are random when the bilayers are annealed at tem-peratures between 240℃ and 300℃. For 200nm/50nm bilayers, the orientation of Bi are always preferred. Corresponding to the orientations mentioned above, the minimum on the R(300K)-Ta curve appears only in the case of 200nm/100 nm bilayers.
Received: 29 October 1993
Accepted manuscript online:
LI YU-ZI (李玉芝), LI TIE (李铁), XU CUN-YI (许存义), ZHOU GUI-EN (周贵恩), ZHANG YU-HENG (张裕恒) THE CRYSTALLIZATION OF Bi IN THE ANNEALED a-Ge/Bi BILAYER AND ITS EFFECT ON CONDUCTIVITY 1994 Acta Physica Sinica (Overseas Edition) 3 702
AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇). Chin. Phys. B, 2015, 24(11): 117307.
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