Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

doi:10.1088/1674-1056/20/11/117301

Abstract The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm². A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm² under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm².

Keywords: 4H-SiC junction barrier Schottky offset field plate electrical characteristics

Received: 30 March 2011
Revised: 03 May 2011
Accepted manuscript online:

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	73.40.-c	(Electronic transport in interface structures)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.Kk	(Junction diodes)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No. 2008ZDKG-30).

Cite this article:

Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode 2011 Chin. Phys. B 20 117301

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Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

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