Abstract We have investigated doped MBE GaAs films using photoreflectance (PR) spec-troscopy. Special spectral structures have been observed in the vicinity of the funda-mental band gap, which are quite different from the Franz-Keldysh oscillation (FKO) from uniform electric fields under flatband modulations. Numerical analysis has been performed for FKO from electric fields in the space charge region under non-flatband modulations. Some typical FKO line shapes are illustrated. For moderately doped samples the calculated line shapes are basically consistent with experiments. The surface electric field and the Fermi level pinning have also been deduced from exper-iments.
Received: 12 October 1992
Accepted manuscript online:
Fund: Project supported in part by the National Laboratory of Semiconductor Supaerlattices.
Cite this article:
PAN SHI-HONG (潘士宏), WANG ZHONG-HE (王忠和), LIU YI (刘毅), ZHANG CUN-ZHOU (张存洲), ZHOU XIAO-CHUAN (周小川), JIANG JIAN (蒋健), XU GUI-CHANG (徐贵昌) FRANZ-KELDYSH OSCILLATION FROM THE SPACE CHARGE REGION OF MBE GaAs FILMS 1993 Acta Physica Sinica (Overseas Edition) 2 619
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