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Sandwich-structured long-wave infrared transparent electromagnetic shielding film using transmittance-enhanced wetting layer/Ag stacked conductive layers |
| Zhirui Zhang(张智睿)1,2,3,†, Yuyang Zhang(张雨阳)1,2,3,†, Le Zhao(赵乐)4,†, Zhi Wang(王植)1,2,3, Chi Zhang(张弛)1,2,3, Yao Wu(吴尧)1,2,3, Ruifan Li(李瑞凡)1,2,3, Yonghao Han(韩永昊)1,5,‡, and Chaoquan Hu(胡超权)1,2,3,§ |
1 State Key Laboratory of High Pressure and Superhard Materials, Jilin University, Changchun 130012, China;
2 Key Laboratory of Automobile Materials of Ministry of Education, Jilin University, Changchun 130012, China;
3 School of Materials Science and Engineering, Jilin University, Changchun 130012, China;
4 National Center for Nanoscience and Technology, Beijing 100190, China;
5 College of Physics, Jilin University, Changchun 130012, China |
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Abstract Designing infrared transparent electromagnetic shielding films (ITESFs) is challenging because carrier absorption and carrier transport occur simultaneously. Sandwich structures with Ag inserted into semiconductors can achieve synergy between transparency and electromagnetic shielding effectiveness, but Ag films alone suffer from island growth and optical loss. This work presents a sandwich structure using a transmittance-enhancing conductive layer composed of a wetting layer and Ag (WL/Ag). As a proof of concept, a Bi$_{2}$Se$_{3}$/Ti WL/Ag/Bi$_{2}$Se$_{3}$ film was prepared, achieving a long-wavelength infrared transmittance of 77% and a conductivity of 5988 S/cm. The electromagnetic shielding effectiveness reached $\sim 22$ dB in the X band (8.2-12.4 GHz), meeting the requirement of protecting infrared optoelectronic devices from electromagnetic interference. High-resolution transmission electron microscopy and theoretical calculations showed that the Ti wetting layer enhances performance through high surface energy, low nk product values, and admittance matching. We proposed design criteria for wetting layers and identified candidate materials such as Cr. This study provides an optimization strategy for sandwich structures and introduces high-performance ITESFs for infrared optoelectronic devices.
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Received: 10 November 2025
Revised: 08 January 2026
Accepted manuscript online: 12 February 2026
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PACS:
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68.55.-a
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(Thin film structure and morphology)
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81.15.Cd
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(Deposition by sputtering)
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61.30.Hn
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(Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions)
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28.41.Qb
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(Structural and shielding materials)
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| Fund: This work was supported by the Natural Science Foundation of Beijing, China (Grant No. 4222086) and the National Natural Science Foundation of China (Grant Nos. 52032004 and 52272153). |
Corresponding Authors:
Yonghao Han, Chaoquan Hu
E-mail: hanyh@jlu.edu.cn;cqhu@jlu.edu.cn
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Cite this article:
Zhirui Zhang(张智睿), Yuyang Zhang(张雨阳), Le Zhao(赵乐), Zhi Wang(王植), Chi Zhang(张弛), Yao Wu(吴尧), Ruifan Li(李瑞凡), Yonghao Han(韩永昊), and Chaoquan Hu(胡超权) Sandwich-structured long-wave infrared transparent electromagnetic shielding film using transmittance-enhanced wetting layer/Ag stacked conductive layers 2026 Chin. Phys. B 35 046803
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