| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin-bias-controlled current rectification and negative magnetoresistance in a quantum dot spin transistor |
| Zhengzhong Zhang(张正中)†, Han Hu(胡涵), Runze Zhu(朱润泽), Yanzong Wang(王延宗), and Hao Liu(刘昊)‡ |
| Faculty of Mathematics and Physics, Huai'an University, Huaian 223003, China |
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Abstract We propose a spin-bias-controlled quantum-dot spin-valve device and systematically investigate its charge and spin transport properties. Numerical results reveal that the parallel magnetic configuration enables gate-tunable rectification of both charge and spin currents, whereas no rectification occurs in the antiparallel configuration. Remarkably, in specific gate voltage regimes, the device achieves perfect charge rectification — characterized by complete suppression of reverse-bias charge currents — while sustaining finite spin currents. Furthermore, a negative magnetoresistance emerges in this system, electrically tunable to its theoretical minimum of $-1$, accompanied by an antiparallel to parallel current on/off ratio exceeding $10^{6}$. This behavior implies that within tailored gate voltage regimes, only the antiparallel configuration permits charge conduction, with electron current entirely blocked in the parallel configuration. These results establish spin-bias-driven quantum dot systems as multifunctional platforms for tunable rectification and magnetoresistance control, highlighting their potential for advancing spintronic technologies.
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Received: 09 July 2025
Revised: 12 September 2025
Accepted manuscript online: 07 October 2025
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PACS:
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72.25.-b
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(Spin polarized transport)
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72.25.Dc
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(Spin polarized transport in semiconductors)
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72.25.Hg
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(Electrical injection of spin polarized carriers)
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73.21.La
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(Quantum dots)
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| Fund: Project supported by National Natural Science Foundation of China (Grant No. 11404322) and the Natural Science Foundation of Huai’an (Grant No. HAB202229). |
Corresponding Authors:
Zhengzhong Zhang, Hao Liu
E-mail: zeikeezhang@163.com;hyitliuh@163.com
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Cite this article:
Zhengzhong Zhang(张正中), Han Hu(胡涵), Runze Zhu(朱润泽), Yanzong Wang(王延宗), and Hao Liu(刘昊) Spin-bias-controlled current rectification and negative magnetoresistance in a quantum dot spin transistor 2026 Chin. Phys. B 35 077202
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