| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets |
| Zhengzhong Zhang(张正中)1,2,†, Ruya Guo(郭儒雅)1, Rui Bo(薄锐)1, and Hao Liu(刘昊)1,‡ |
1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai'an 223003, China;
2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China |
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Abstract A single-molecule magnet is a long-sought-after nanoscale component because it can enable us to miniaturize nonvolatile memory storage devices. The signature of a single-molecule magnet is switching between two bistable magnetic ground states under an external magnetic field. Based on this feature, we theoretically investigate a magnetic-field-controlled reversible resistance change active at low temperatures in a molecular magnetic tunnel junction, which consists of a single-molecule magnet sandwiched between a ferromagnetic electrode and a normal metal electrode. Our numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode magnetization. Moreover, different magnetic configurations can be "read out" based on different resistance states or different spin polarization parameters in the current spectrum, even in the absence of a magnetic field. Such an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve devices. The difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic molecule. This proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices, with potential applications in future high-density nonvolatile memory devices.
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Received: 17 January 2023
Revised: 10 April 2023
Accepted manuscript online: 24 April 2023
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PACS:
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75.50.Xx
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(Molecular magnets)
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75.60.Jk
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(Magnetization reversal mechanisms)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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| Fund: This work was supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of Huai’an (Grant Nos. HAB202229 and HAB202150), and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 22KJD140002). |
Corresponding Authors:
Zhengzhong Zhang, Hao Liu
E-mail: zeikeezhang@163.com;hyitliuh@163.com
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Cite this article:
Zhengzhong Zhang(张正中), Ruya Guo(郭儒雅), Rui Bo(薄锐), and Hao Liu(刘昊) Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets 2023 Chin. Phys. B 32 097502
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