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Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS2 |
| Yimai Jiang(蒋伊麦), Jianing Tan(谭家宁), Meng Ge(葛蒙), and Gang Ouyang(欧阳钢)† |
| Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China |
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Abstract To enhance the transport properties of monolayer MoS$_{2}$ (ML-MoS$_{2}$)-based electronic devices, we systematically investigate the curvature-dependent electronic structure and carrier mobility in a corrugated ML-MoS$_{2}$ using density functional theory and the non-equilibrium Green's function method. We reveal that localized strain induces a polarized electric field, which modifies the band structure and delocalizes the electronic states, thereby significantly improving charge transport efficiency. The conductance along the zigzag direction exhibits 10$^{7}$-fold enhancement with increasing curvature. At a maximum local strain of 10%, the electronic mobility reaches 613.68 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, representing a 9.1-fold improvement over planar ML-MoS$_{2}$. Our results agree well with available evidence and provide crucial insights for designing high-performance devices via strain engineering.
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Received: 03 August 2025
Revised: 15 September 2025
Accepted manuscript online: 30 September 2025
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PACS:
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77.80.bn
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(Strain and interface effects)
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73.23.-b
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(Electronic transport in mesoscopic systems)
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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| Fund: This study was supported by the National Natural Science Foundation of China (Grant No. 12474226). |
Corresponding Authors:
Gang Ouyang
E-mail: gangouy@hunnu.edu.cn
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Cite this article:
Yimai Jiang(蒋伊麦), Jianing Tan(谭家宁), Meng Ge(葛蒙), and Gang Ouyang(欧阳钢) Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS2 2026 Chin. Phys. B 35 047701
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