Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS2

doi:10.1088/1674-1056/ae0d59

Abstract To enhance the transport properties of monolayer MoS$_{2}$ (ML-MoS$_{2}$)-based electronic devices, we systematically investigate the curvature-dependent electronic structure and carrier mobility in a corrugated ML-MoS$_{2}$ using density functional theory and the non-equilibrium Green's function method. We reveal that localized strain induces a polarized electric field, which modifies the band structure and delocalizes the electronic states, thereby significantly improving charge transport efficiency. The conductance along the zigzag direction exhibits 10$^{7}$-fold enhancement with increasing curvature. At a maximum local strain of 10%, the electronic mobility reaches 613.68 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, representing a 9.1-fold improvement over planar ML-MoS$_{2}$. Our results agree well with available evidence and provide crucial insights for designing high-performance devices via strain engineering.

Keywords: density functional theory corrugated monolayer MoS$_{2}$ strain engineering transport properties

Received: 03 August 2025
Revised: 15 September 2025
Accepted manuscript online: 30 September 2025

PACS:	77.80.bn	(Strain and interface effects)
	73.23.-b	(Electronic transport in mesoscopic systems)
	71.15.Mb	(Density functional theory, local density approximation, gradient and other corrections)

Fund: This study was supported by the National Natural Science Foundation of China (Grant No. 12474226).

Corresponding Authors: Gang Ouyang
E-mail: gangouy@hunnu.edu.cn

Cite this article:

Yimai Jiang(蒋伊麦), Jianing Tan(谭家宁), Meng Ge(葛蒙), and Gang Ouyang(欧阳钢) Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS₂ 2026 Chin. Phys. B 35 047701

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Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS₂