Regulation mechanism of Si vacancies in unintentional silicon-doped diamond by gas flow in MPCVD

doi:10.1088/1674-1056/ae07aa

Abstract Diamond with silicon vacancies has an important role as a promising single-photon source applicable in the quantum information field. However, in a microwave plasma chemical vapor deposition (MPCVD) system, due to the presence of unintentional silicon doping sources such as quartz windows, the behavior of silicon vacancy formation in silicon-doped diamond is complex. In this work, the underlying mechanism of formation of silicon vacancies by unintentional silicon doping in diamond is investigated from the perspective of growing surface kinetics in a two-gas-flow MPCVD system. This system is equipped with a novel susceptor geometry designed to deliver an additional gas flow directly onto the substrate surface. Increasing the concentration of growth doping substances on the substrate surface thereby enhances the efficiency of silicon vacancy formation in diamond. At the same time, by changing the substrate deposition angle the distribution of gas and plasma on the substrate surface is changed, thereby regulating the concentration and distribution of silicon vacancies formed by unintentional silicon doping. Experimental and computational results demonstrate that the difference in silicon vacancies formed by unintentional silicon doping in diamond depends on the substances present on the substrate surface and the distribution of plasma.

Keywords: diamond silicon vacancy doping mechanism unintentional doping

Received: 02 April 2025
Revised: 14 June 2025
Accepted manuscript online: 17 September 2025

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.05.ug	(Diamond)
	07.30.Bx	(Degasification, residual gas)
	07.30.Kf	(Vacuum chambers, auxiliary apparatus, and materials)

Fund: This work was supported by the National Natural Science Foundation of China (Grant No. 62274084) and the Fundamental Research Funds for the Central Universities (Grant No. 0210-14380193).

Corresponding Authors: Kun Tang, Shulin Gu
E-mail: ktang@nju.edu.cn;slgu@nju.edu.cn

Cite this article:

Kai Yang(杨凯), Liangxue Gu(顾梁雪), Genyou Zhao(赵耕右), Kun Tang(汤琨), Bo Feng(冯博), Jiandong Ye(叶建东), Rong Zhang(张荣), Shunming Zhu(朱顺明), and Shulin Gu(顾书林) Regulation mechanism of Si vacancies in unintentional silicon-doped diamond by gas flow in MPCVD 2025 Chin. Phys. B 34 118102

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Regulation mechanism of Si vacancies in unintentional silicon-doped diamond by gas flow in MPCVD

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