Abstract The negatively charged nitrogen vacancy (NV) center ensemble in as-grown chemical vapor deposition (CVD) diamond is a promising candidate for quantum sensing due to its long coherence time and excellent optical properties. However, achieving a high concentration of NV centers in as-grown CVD diamond remains a critical challenge, which constrains the performance of NV based sensors. In this study, we observe that NV center formation efficiency is significantly enhanced during the initial growth phase, with a coherence time of 1.1 μs. These findings demonstrate that high-concentration NV centers can be achieved in as-grown diamonds, greatly enhancing their utility in high-performance magnetometers and quantum sensing.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11374280 and 50772110).
Corresponding Authors:
Wei Zhu, Guanzhong Wang
E-mail: zhuw@ustc.edu.cn;gzwang@ustc.edu.cn
Cite this article:
Yuanjie Yang(杨元杰), Shengran Lin(林盛然), Jiaxin Zhao(赵嘉昕), Changfeng Weng(翁长风), Liren Lou(楼立人), Wei Zhu(祝巍), and Guanzhong Wang(王冠中) Ultrahigh concentration of NV- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate 2025 Chin. Phys. B 34 056102
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