Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet
Zheng-Zhong Zhang(张正中)1,2,‡ and Hao Liu(刘昊)1,†
1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China; 2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
Abstract A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a single-molecule magnet sandwiched between the nonmagnetic and ferromagnetic (FM) leads. By applying different voltage pulses Vwrite across the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses Vprobe. It is shown that the polarization of the spin current is extremely high (up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.
(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 18KJD140005), and Zhengzhong Zhang is supported by the China Postdoctoral Science Foundation (Grant No. 2013M541635) and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).
Zheng-Zhong Zhang(张正中) and Hao Liu(刘昊) Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet 2021 Chin. Phys. B 30 067501
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