Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

doi:10.1088/1674-1056/abd9b1

Abstract A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a single-molecule magnet sandwiched between the nonmagnetic and ferromagnetic (FM) leads. By applying different voltage pulses V_write across the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_probe. It is shown that the polarization of the spin current is extremely high (up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.

Keywords: single-molecule magnet spin-transfer torque spin-dependent electron tunneling

Received: 29 August 2020
Revised: 16 December 2020
Accepted manuscript online: 08 January 2021

PACS:	72.15.Jf	(Thermoelectric and thermomagnetic effects)
	75.50.Xx	(Molecular magnets)
	75.60.Jk	(Magnetization reversal mechanisms)
	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 18KJD140005), and Zhengzhong Zhang is supported by the China Postdoctoral Science Foundation (Grant No. 2013M541635) and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Corresponding Authors: Hao Liu, Zheng-Zhong Zhang
E-mail: hyitliuh@163.com;zeikeezhang@163.com

Cite this article:

Zheng-Zhong Zhang(张正中) and Hao Liu(刘昊) Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet 2021 Chin. Phys. B 30 067501

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Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

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