Evolution of electrical and magnetotransport properties with lattice strain in La0.7Sr0.3MnO3 film

doi:10.1088/1674-1056/aba09b

Abstract In this paper, we investigate the effects of lattice strain on the electrical and magnetotransport properties of La_0.7Sr_0.3MnO₃ (LSMO) films by changing film thickness and substrate. For electrical properties, a resistivity upturn emerges in LSMO films, i.e., LSMO/STO and LSMO/LSAT with small lattice strain at a low temperature, which originates from the weak localization effect. Increasing film thickness weakens the weak localization effect, resulting in the disappearance of resistivity upturn. While in LSMO films with a large lattice strain (i.e., LSMO/LAO), an unexpected semiconductor behavior is observed due to the linear defects. For magnetotransport properties, an anomalous in-plane magnetoresistance peak (pMR) occurs at low temperatures in LSMO films with small lattice strain, which is caused by two-dimensional electron gas (2DEG). Increasing film thickness suppresses the 2DEG, which weakens the pMR. Besides, it is found that the film orientation has no influence on the formation of 2DEG. While in LSMO/LAO films, the 2DEG cannot form due to the existence of linear defects. This work can provide an efficient way to regulate the film transport properties.

Keywords: LSMO film lattice strain electrical transport magnetotransport

Received: 09 May 2019
Revised: 03 June 2020
Accepted manuscript online: 29 June 2020

PACS:	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	68.37.Og	(High-resolution transmission electron microscopy (HRTEM))
	72.15.Rn	(Localization effects (Anderson or weak localization))
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974105), the Double-Hundred Talent Plan, Shandong Province, China (Grant No. WST2018006), the Recruitment Program of High-end Foreign Experts, China (Grant Nos. GDW20163500110 and GDW20173500154), and the Top-notch Innovative Talent Program of Qingdao City, China (Grant No. 13-CX-8). One of the authors (Yi-Qian Wang) was sponsored by the Taishan Scholar Program of Shandong Province, China, the Qingdao International Center for Semiconductor Photoelectric Nanomaterials, China, and Shandong Provincial University Key Laboratory of Optoelectrical Material Physics and Devices, China.

Corresponding Authors: Yi-Qian Wang
E-mail: yqwang@qdu.edu.cn

Cite this article:

Zhi-Bin Ling(令志斌), Qing-Ye Zhang(张庆业), Cheng-Peng Yang(杨成鹏), Xiao-Tian Li(李晓天), Wen-Shuang Liang(梁文双), Yi-Qian Wang(王乙潜), Huai-Wen Yang(杨怀文), Ji-Rong Sun(孙继荣) Evolution of electrical and magnetotransport properties with lattice strain in La_0.7Sr_0.3MnO₃ film 2020 Chin. Phys. B 29 096802

[1]	Wang L M and Guo C C 2005 Appl. Phys. Lett. 87 172503
[2]	Dey P, Nath T K and Taraphder A 2007 Appl. Phys. Lett. 91 012511
[3]	Malisa A and Ivanov Z 2005 J. Magn. Magn. Mater. 295 277
[4]	Lee H S, Choi S G, Park H H and Rozenberg M J 2013 Sci. Rep. 3 1704
[5]	Sharma H, Tulapurkar A and Tomy C V 2014 Appl. Phys. Lett. 105 222406
[6]	Ling Z B, Liu G J, Yang C P, Liang W S and Wang Y Q 2019 Chin. Phys. B 28 046101
[7]	Zener C 1951 Phys. Rev. 82 403
[8]	Takamura Y, Chopdekar R V, Arenholz E and Suzuki Y 2008 Appl. Phys. Lett. 92 162504
[9]	Cui B, Song C, Gehring G A, Li F, Wang G, Chen C and Pan F 2015 Adv. Funct. Mater. 25 864
[10]	Tsui F, Smoak M C, Nath T K and Eom C B 2000 Appl. Phys. Lett. 76 2421
[11]	Sirena M, Steren L and Guimpel J 2000 Thin Solid Films 373 102
[12]	Yang S Y, Kuang W L, Liou Y, Tse W S, Lee S F and Yao Y D 2004 J. Magn. Magn. Mater. 268 326
[13]	Maritato L, Adamo C, Barone C, De Luca G M, Galdi A, Orgiani P and Petrov A Y 2006 Phys. Rev. B 73 094456
[14]	Kondo J 1964 Prog. Theor. Phys. 32 37
[15]	Rozenberg E, Auslender M, Felner I and Gorodetsky G 2000 J. Appl. Phys. 88 2578
[16]	Niu W, Gao M, Wang X F, Song F Q, Du J, Wang X R, Xu Y B and Zhang R 2016 Sci. Rep. 6 26081
[17]	Zhang Y, Gan Y L, Niu W, Norrman K, Yan X, Christensen D V, von Soosten M, Zhang H R, Shen B G, Pryds N, Sun J R and Chen Y Z 2018 ACS Appl. Mater. Inter. 10 1434
[18]	Lee P A and Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[19]	Lee P A and Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[20]	Liu B, Wang Y Q, Liu G J, Feng H L, Yang H W and Sun J R 2016 J. Appl. Phys. 120 154103
[21]	Bergmann G 1984 Phys. Rep. 107 1
[22]	Shalom M B, Tai C W, Lereah Y, Sachs M, Levy E, Rakhmilevitch D, Palevski A and Dagan Y 2009 Phys. Rev. B 80 140403
[23]	Li X T, Liu B, Wang Y Q, Xue X Y, Liu G J, Yang H W and Sun J R 2018 J. Am. Ceram. Soc. 101 2339

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Evolution of electrical and magnetotransport properties with lattice strain in La0.7Sr0.3MnO3 film

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Evolution of electrical and magnetotransport properties with lattice strain in La_0.7Sr_0.3MnO₃ film