Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

doi:10.1088/1674-1056/ab9434

Abstract Effective improvement in electrical properties of NO passivated SiC/SiO₂ interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3×10¹² cm^-2·eV^-1 to 4×10¹¹ cm^-2·eV^-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.

Keywords: SiC electron irradiation interface traps MOS

Received: 18 March 2020
Revised: 01 May 2020
Accepted manuscript online: 19 May 2020

PACS:	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0100601) and the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159).

Corresponding Authors: Yun Bai, Xin-Yu Liu
E-mail: baiyun@ime.ac.cn;xyliu@ime.ac.cn

Cite this article:

Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯) Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation 2020 Chin. Phys. B 29 097301

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Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation

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Improved electrical properties of NO-nitrided SiC/SiO₂ interface after electron irradiation