Incident particle range dependence of radiation damage in a power bipolar junction transistor

doi:10.1088/1674-1056/21/10/104211

Abstract The characteristic degradations in silicon NPN bipolar junction transistors (BJTs) of type 3DD155 are examined under the irradiations of 25-MeV carbon (C), 40-MeV silicon (Si), and 40-MeV chlorine (Cl) ions respectively. Different electrical parameters are measured in-situ during the exposure of heavy ions. The experimental data shows that the changes in the reciprocal of the gain variation (Δ (1/β )) of 3DD155 transistors irradiated respectively by 25-MeV C, 40-MeV Si, and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence. The Δ (1/β) of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence, a little smaller when the device is irradiated by 40-MeV Si ions, and smallest in the case of the 40-MeV Cl ions irradiation. The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

Keywords: radiation effects ionization damage displacement damage transistors

Received: 15 January 2012
Revised: 24 February 2012
Accepted manuscript online:

PACS:

42.88.+h

(Environmental and radiation effects on optical elements, devices, and systems)

Fund: Project supported by the Fundamental Research Funds for the Central Universities (Grant No. HIT.KLOF.2010003) and the National Basis Research Program of China (Grant No. 51320).

Corresponding Authors: Li Xing-Ji
E-mail: lxj0218@hit.edu.cn

Cite this article:

Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群) Incident particle range dependence of radiation damage in a power bipolar junction transistor 2012 Chin. Phys. B 21 104211

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