Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

doi:10.1088/1674-1056/26/1/018501

Abstract

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.

Keywords: displacement damage neutron irradiation single event latchup TCAD simulation

Received: 03 August 2016
Revised: 26 September 2016
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	61.80.-x	(Physical radiation effects, radiation damage)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Hong-Xia Guo
E-mail: guohxnint@126.com

Cite this article:

Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯) Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM 2017 Chin. Phys. B 26 018501

[1]	Johnston A H 1993 Radiation and its Effects on Components and Systems, RADECS 93, Second European Conference on, p. 433
[2]	Ochoa A and Dawes W 1979 IEEE Trans. Nucl. Sci. 26 5065
[3]	Schroeder J E and Ochoa A 1980 IEEE Trans. Nucl. Sci. 27 1735
[4]	Adams J R 1979 IEEE Trans. Nucl. Sci. 26 5069
[5]	Spratt J P, Pickel J C, Leadon R E, Lacoe R C, Moss S C and Lalumondiere S D 2003 IEEE Trans. Nucl. Sci. 50 2219
[6]	Eddy J K 1981 IEEE Trans. Nucl. Sci. 28 1871
[7]	Gadlage M J, M J Kay and Duncan A R 2012 IEEE Trans. Nucl. Sci. 59 2722
[8]	Gaspard N J, Witulski A F and Atkinson N M 2011 IEEE Trans. Nucl. Sci. 58 2614
[9]	Buchner S P 2013 IEEE Trans. Nucl. Sci. 60 1852
[10]	Srour J R, Chen S C and Othmer S 1979 IEEE Trans. Nucl. Sci. 26 4783

[1]	Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[2]	Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Chin. Phys. B, 2022, 31(5): 056106.
[3]	An insulated-gate bipolar transistor model based on the finite-volume charge method Manhong Zhang(张满红) and Wanchen Wu(武万琛). Chin. Phys. B, 2022, 31(12): 128501.
[4]	Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵). Chin. Phys. B, 2021, 30(6): 067302.
[5]	Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明). Chin. Phys. B, 2020, 29(3): 038501.
[6]	Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source Rui Xu(徐瑞), Zu-Jun Wang(王祖军), Yuan-Yuan Xue(薛院院), Hao Ning(宁浩), Min-Bo Liu(刘敏波), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), Guan-Tao Dong(董观涛). Chin. Phys. B, 2020, 29(1): 014210.
[7]	Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏). Chin. Phys. B, 2019, 28(6): 068503.
[8]	Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院). Chin. Phys. B, 2019, 28(6): 067302.
[9]	Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利). Chin. Phys. B, 2018, 27(3): 038501.
[10]	Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘). Chin. Phys. B, 2014, 23(11): 116104.
[11]	Optical study of D–D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers Wang Yun-Bo (王云波), Li Gong-Ping (李公平), Xu Nan-Nan (许楠楠), Pan Xiao-Dong (潘小东). Chin. Phys. B, 2013, 22(3): 036102.
[12]	Scaling effects of single-event gate rupture in thin oxides Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉). Chin. Phys. B, 2013, 22(11): 118501.
[13]	Effect of bias condition on heavy ion radiation in bipolar junction transistor Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 ). Chin. Phys. B, 2012, 21(8): 080703.
[14]	Neutron irradiation effects on AlGaN/GaN high electron mobility transistors LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) . Chin. Phys. B, 2012, 21(3): 037104.
[15]	Incident particle range dependence of radiation damage in a power bipolar junction transistor Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群). Chin. Phys. B, 2012, 21(10): 104211.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Cite this article:

Online attention