Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

doi:10.1088/1674-1056/19/5/056103

Abstract The radiation effects of the metal-oxide-semiconductor (MOS) and the bipolar devices are characterised using 8~MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contribution to MOS and bipolar devices. The irradiation particles, which cause larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.

Keywords: radiation effects MOS and bipolar devices ionisation damage displacement damage

Received: 20 July 2009
Revised: 09 October 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.Pq	(Bipolar transistors)

Fund: Project supported by the National Basis Research Program of China (Grant No.~61343).

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Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons 2010 Chin. Phys. B 19 056103

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Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

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