High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

doi:10.1088/1674-1056/28/1/014208

Abstract

InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A. 19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature (T₀) is up to 140℃ near room temperature (25-55℃).

Keywords: mid-infrared laser diode digital alloys characteristic temperature bars

Received: 27 August 2018
Revised: 12 December 2018
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	78.55.Cr	(III-V semiconductors)
	78.67.De	(Quantum wells)
	42.60.Pk	(Continuous operation)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

Corresponding Authors: Yu Zhang, Zhi-Chuan Niu
E-mail: zhangyu@semi.ac.cn;zcniu@semi.ac.cn

Cite this article:

Sheng-Wen Xie(谢圣文), Yu Zhang(张宇), Cheng-Ao Yang(杨成奥), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Yi Zhang(张一), Jin-Ming Shang(尚金铭), Fu-Hui Shao(邵福会), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars 2019 Chin. Phys. B 28 014208

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High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

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