Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

doi:10.1088/1674-1056/26/7/077802

Abstract

AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.

Keywords: AlGaN time-resolved photoluminescence localized excitons

Received: 03 January 2017
Revised: 08 April 2017
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	78.47.jd	(Time resolved luminescence)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No.2016YFB0400101) and Beijing Science and Technology Project,China (Grant No.Z151100003315024).

Corresponding Authors: Peng Jin
E-mail: pengjin@semi.ac.cn

Cite this article:

Wei Li(李维), Peng Jin(金鹏), Wei-Ying Wang(王维颖), De-Feng Mao(毛德丰), Xu Pan(潘旭), Xiao-Liang Wang(王晓亮), Zhan-Guo Wang(王占国) Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer 2017 Chin. Phys. B 26 077802

[1]	Hao G D, Taniguchi M, Tamari N and Inoue S 2016 J. Phys. D:Appl. Phys. 49 235101
[2]	Yu H P, Li S B, Zhang P, Wu S H, Wei X B, Wu Z M and Chen Z 2014 Chin. Phys. Lett. 31 108502
[3]	Wu H, Wu W, Zhang H, Chen Y, Wu Z, Wang G and Jiang H 2016 Appl. Phys. Express 9 052103
[4]	Zhang W, Xu J, Ye W, Li Y, Qi Z, Dai J, Wu Z, Chen C, Yin J, Li J, Jiang H and Fang Y 2015 Appl. Phys. Lett. 106 021112
[5]	Yang L, Zhou X W, Ma X H, Lv L, Cao Y R, Zhang J C and Hao Y 2017 Chin. Phys. B 26 017304
[6]	Wang Y G, Feng Z H, Lv Y J, Tan X, Dun S B, Fang Y L and Cai S J 2016 Chin. Phys. B 25 0107106
[7]	Kuokstis E, Sun W H, Shatalov M, Yang J W and Khan M A 2006 Appl. Phys. Lett. 88 261905
[8]	Tamulaitis G, Yilmaz I, Shur M S, Fareed Q, Gaska R and Khan M A 2004 Appl. Phys. Lett. 85 206
[9]	Chung S J, Kumar M S, Lee H J and Suh E K J 2004 J. Appl. Phys. 95 3565
[10]	Li J, Nam K B, Lin J Y and Jiang H X 2001 Appl. Phys. Lett. 79 3245
[11]	Murotani H, Yamada Y, Taguchi T, Ishibashi A, Kawaguchi Y and Yokogawa T 2008 J. Appl. Phys. 104 053514
[12]	Kim H S, Mair R A, Li J, Lin J Y and Jiang H X 2000 Appl. Phys. Lett. 76 1252
[13]	Cho Y H, Gainer G H, Lam J B, Song J J, Yang W and Jhe W 2000 Phys. Rev. B 61 7203
[14]	Lee K B, Parbrook P J, Wang T, Ranalli F, Martin T, Balmer R S and Wallis D J 2007 J. Appl. Phys. 101 053513
[15]	Oueslati M, Benoitála Gillaume C and Zouaghi M 1988 Phys. Rev. B 37 3037
[16]	Li Q, Xu S J, Cheng W C, Xie M H, Tong S Y, Che C M and Yang H 2001 Appl. Phys. Lett. 79 1810
[17]	Xu Z Y, Lu Z D, Yuan Z L, Yang X P, Zheng B Z, Xu J Z, Ge W K, Wang Y, Wang J and Chang L L 1988 Superlattices Microstruct. 23 381
[18]	Li W, Jin P, Wang W Y, Mao D F, Liu G P, Wang Z G, Wang J M, Xu F J and Shen B 2014 Journal of Semiconductors 35 093001
[19]	Im J S, Moritz A, Steuber F, Härle V, Scholz F and Hangleiter A 1997 Appl. Phys. Lett. 70 631
[20]	Akiyama H, Koshiba S, Someya T, Wada K, Noge H, Nakamura Y, Inoshita T, Shimizu A and Sakaki H 1994 Phys. Rev. Lett. 72 924
[21]	Feldmann J, Peter G, Göbel E O, Dawson P, Moore K, Foxon C and Elliott R J 1987 Phys. Rev. Lett. 59 2337

[1]	Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[2]	Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙). Chin. Phys. B, 2022, 31(7): 077801.
[3]	Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068501.
[4]	Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N₂O radical treatment Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 057301.
[5]	Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 058505.
[6]	High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027103.
[7]	High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027301.
[8]	Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Chin. Phys. B, 2022, 31(12): 127701.
[9]	A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.
[10]	Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Chin. Phys. B, 2022, 31(11): 117301.
[11]	High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f_T/f_max over 100 GHz/200 GHz Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(8): 087102.
[12]	Ferroelectric effect and equivalent polarization charge model of PbZr_0.2Ti_0.8O₃ on AlGaN/GaN MIS-HEMT Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(5): 057302.
[13]	Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer Lu Xue(薛露), Yi Li(李毅), Mei Ge(葛梅), Mei-Yu Wang(王美玉), and You-Hua Zhu(朱友华). Chin. Phys. B, 2021, 30(4): 047802.
[14]	Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(4): 040502.
[15]	Distribution of donor states on the surfaceof AlGaN/GaN heterostructures Yue-Bo Liu(柳月波), Hong-Hui Liu(刘红辉), Jun-Yu Shen(沈俊宇), Wan-Qing Yao(姚婉青), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君). Chin. Phys. B, 2021, 30(12): 128102.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

Cite this article:

Online attention