A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

doi:10.1088/1674-1056/26/4/047305

Abstract A novel enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. Specifically, several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure. The simulation results revealed that the V_th decreases with the increase of polarization sheet charge density and the tunnel dielectric (between FGs and AlGaN) thickness, while it increases with the increase of FGs sheet charge density and blocking dielectric (between FGs and control gate) thickness. In the case of the same gate length, the V_th will left shift with decreasing FG length. More interestingly, the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.

Keywords: AlGaN/GaN high electron mobility transistor split floating gates enhancement mode

Received: 01 November 2016
Revised: 08 January 2017
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	81.05.Ea	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by "Efficient and Energy-Saving GaN on Si Power Devices" Research Fund (Grant No. KQCX20140522151322946), the Research Fund of the Third Generation Semiconductor Key Laboratory of Shenzhen, China (Grant No. ZDSYS20140509142721434), the "Key Technology Research of GaN on Si Power Devices" Research Fund (Grant No. JSGG20140729145956266), and the "Research of Low Cost Fabrication of GaN Power Devices and System Integration" Research Fund (Grant No. JCYJ201602261926390).

Corresponding Authors: Hong-Yu Yu
E-mail: yuhy@sustc.edu.cn

Cite this article:

Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇) A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates 2017 Chin. Phys. B 26 047305

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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

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