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Special Issue:
TOPICAL REVIEW — 2D materials: physics and device applications
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| TOPICAL REVIEW—2D materials: physics and device applications |
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Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides |
| Dong Sun(孙栋)1,2, Jia-Wei Lai(赖佳伟)1, Jun-Chao Ma(马骏超)1, Qin-Sheng Wang(王钦生)1, Jing Liu (刘晶)3 |
1 International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;
3 State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China |
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Abstract The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based information processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many-particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel context of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity-resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley-related many-particle electronic states in semiconducting monolayer transitional metal dichalcogenides.
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Received: 17 October 2016
Revised: 21 December 2016
Accepted manuscript online:
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PACS:
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78.47.J-
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(Ultrafast spectroscopy (<1 psec))
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78.47.jd
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(Time resolved luminescence)
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71.35.-y
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(Excitons and related phenomena)
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| Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2012CB921300 and 2014CB920900), the National Key Research and Development Program of China (Grant No. 2016YFA0300802), the National Natural Science Foundation of China (Grant Nos. 11274015, 11674013, and 21405109), the Recruitment Program of Global Experts, China, and Beijing Natural Science Foundation, China (Grant No. 4142024). |
Corresponding Authors:
Dong Sun
E-mail: sundong@pku.edu.cn
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Cite this article:
Dong Sun(孙栋), Jia-Wei Lai(赖佳伟), Jun-Chao Ma(马骏超), Qin-Sheng Wang(王钦生), Jing Liu (刘晶) Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides 2017 Chin. Phys. B 26 037801
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