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TOPICAL REVIEW — 2D materials: physics and device applications
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TOPICAL REVIEW—2D materials: physics and device applications |
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Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices |
Xuefei Li(李学飞)1, Xiong Xiong(熊雄)2, Yanqing Wu(吴燕庆)1,2 |
1 Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for electronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stability, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.
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Received: 05 January 2017
Revised: 13 February 2017
Accepted manuscript online:
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PACS:
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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85.30.-z
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(Semiconductor devices)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504). |
Corresponding Authors:
Yanqing Wu
E-mail: yqwu@hust.edu.cn
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Cite this article:
Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆) Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices 2017 Chin. Phys. B 26 037307
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