Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell

doi:10.1088/1674-1056/26/3/037305

Abstract

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III-V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N⁺-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N⁺-GaAs layer, up to 2×10¹⁹ cm^-3. A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.

Keywords: full indium-tin-oxide (ITO) electrode specific contact resistance solar cell

Received: 29 November 2016
Revised: 26 December 2016
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.40.Cg	(Contact resistance, contact potential)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61534008, 61376081, and 61404157) and the Application Foundation of Suzhou, China (Grant No. SYG201437).

Corresponding Authors: Shulong Lu
E-mail: sllu2008@sinano.ac.cn

Cite this article:

Pan Dai(代盼), Jianya Lu(卢建娅), Ming Tan(谭明), Qingsong Wang(王青松), Yuanyuan Wu(吴渊渊), Lian Ji(季莲), Lifeng Bian(边历峰), Shulong Lu(陆书龙), Hui Yang(杨辉) Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell 2017 Chin. Phys. B 26 037305

[1]	King R R, Law D C, Edmondson K M, Fetzer C M, Kinsey G S, Yoon H, Sherif R A and Karam N H 2007 Appl. Phys. Lett. 90 183516
[2]	King R R, Bhusari D, Boca A, Larrabee D, Liu X Q, Hong W, Fetzer C M, Law D C and Karam N H 2011 Prog. Photovolt: Res. Appl. 19 797
[3]	Guter W, Schoene J, Philipps S P, Sterner M, Siefer G, Wekkeli A, Welser E, Oliva E, Bett A W and Dimroth F 2009 Appl. Phys. Lett. 94 223504
[4]	Geisz J F, Friedman D J, Ward J S, Duda A, Olavarria W J, Moriarty T E, Kiehl J T, Romero M J, Norman A G and Jones K M 2007 Appl. Phys. Lett. 91 023502
[5]	Li N, Lee K, Renshaw C K, Xiao X and Forrest S R 2011 Appl. Phys. Lett. 98 053504
[6]	Lai L W, Chen J T, Lou L R, Wu C H and Lee C T 2008 J. Electrochem. Soc. 155 B1270
[7]	Granqvist C G 2007 Sol. Energy Mater. Sol. Cells 91 1529
[8]	Sberveglieri G, Comini E, Faglia G, Ferroni M, Jimenez G and Vomiero A 2008 In Conference Record of the Thirty Third IEEE Photovoltaic Specialists Conference, San Diego, CA pp. 1-3
[9]	Hou J L, Wu C H and Chang S J 2015 IEEE Electron Device Lett. 36 207
[10]	Igasaki Y and Kanma H 2001 Appl. Surf. Sci. 169 508
[11]	Havard E, Camps T, Bardinal V, Salvagnac L, Armand C, Fontaine C and Pinaud S 2008 Semicond. Sci. Technol. 23 035001
[12]	Tseng C Y and Lee C T 2013 Sol. Energy 89 17
[13]	Tseng C Y, Lee C K and Lee C T 2011 Prog. Photovolt: Res. Appl. 19 436
[14]	Cheng C W, Shiu K T, Li N, Han S J, Shi L and Sadana D K 2013 Nat. Commun. 4 67
[15]	Kayes B M, Zhang L, Twist R, Ding I K and Higashi G S 2014 IEEE J. Photovoltaics 4 729
[16]	Ho J K, Jong C S, Chiu C C, Huang C N, Shih K K, Chen L C, Chen R F and Kai J J 1999 J. Appl. Phys. 86 4491
[17]	Dai P, Tan M, Wu Y Y, Ji L, Bian L F, Lu S L and Yang H 2015 J. Crystal Growth 413 71
[18]	Gan X Y, Zheng X H, Wu Y Y, Lu S L, Yang H, Arimochi M, Watanabe T, Ikeda M, Nomachi I, Yoshida H and Uchida S 2014 Jpn. J. Appl. Phys. 53 021201
[19]	Jiang D S, Makita Y, Ploog K and Queisser H J 1982 J. Appl. Phys. 53 999
[20]	Dai P, Lu S L, Arimochi M, Uchida S, Watanabe T, Luo X D and Yang H 2014 Solid State Commu. 200 9
[21]	Lu S L, Ji L, He W, Dai P, Yang H, Arimochi M, Yoshida H, Uchida S and Ikeda M 2011 Nanos. Res. Lett. 6 576

[1]	Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Chin. Phys. B, 2023, 32(1): 017801.
[2]	Hexagonal boron phosphide and boron arsenide van der Waals heterostructure as high-efficiency solar cell Yi Li(李依), Dong Wei(魏东), Gaofu Guo(郭高甫), Gao Zhao(赵高), Yanan Tang(唐亚楠), and Xianqi Dai(戴宪起). Chin. Phys. B, 2022, 31(9): 097301.
[3]	Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[4]	Optical simulation of CsPbI₃/TOPCon tandem solar cells with advanced light management Min Yue(岳敏), Yan Wang(王燕), Hui-Li Liang(梁会力), and Zeng-Xia Mei (梅增霞). Chin. Phys. B, 2022, 31(8): 088801.
[5]	Improving efficiency of inverted perovskite solar cells via ethanolamine-doped PEDOT:PSS as hole transport layer Zi-Jun Wang(王子君), Jia-Wen Li(李嘉文), Da-Yong Zhang(张大勇), Gen-Jie Yang(杨根杰), and Jun-Sheng Yu(于军胜). Chin. Phys. B, 2022, 31(8): 087802.
[6]	Ferroelectric Ba_0.75Sr_0.25TiO₃ tunable charge transfer in perovskite devices Zi-Xuan Chen(陈子轩), Jia-Lin Sun(孙家林), Qiang Zhang(张强), Chong-Xin Qian(钱崇鑫), Ming-Zi Wang(王明梓), and Hong-Jian Feng(冯宏剑). Chin. Phys. B, 2022, 31(5): 057202.
[7]	Charge transfer modification of inverted planar perovskite solar cells by NiO_x/Sr:NiO_x bilayer hole transport layer Qiaopeng Cui(崔翘鹏), Liang Zhao(赵亮), Xuewen Sun(孙学文), Qiannan Yao(姚倩楠), Sheng Huang(黄胜), Lei Zhu(朱磊), Yulong Zhao(赵宇龙), Jian Song(宋健), and Yinghuai Qiang(强颖怀). Chin. Phys. B, 2022, 31(3): 038801.
[8]	Effect of net carriers at the interconnection layer in tandem organic solar cells Li-Jia Chen(陈丽佳), Guo-Xi Niu(牛国玺), Lian-Bin Niu(牛连斌), and Qun-Liang Song(宋群梁). Chin. Phys. B, 2022, 31(3): 038802.
[9]	Applications and functions of rare-earth ions in perovskite solar cells Limin Cang(苍利民), Zongyao Qian(钱宗耀), Jinpei Wang(王金培), Libao Chen(陈利豹), Zhigang Wan(万志刚), Ke Yang(杨柯), Hui Zhang(张辉), and Yonghua Chen(陈永华). Chin. Phys. B, 2022, 31(3): 038402.
[10]	Analysis of the generation mechanism of the S-shaped J—V curves of MoS₂/Si-based solar cells He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威). Chin. Phys. B, 2022, 31(3): 038503.
[11]	An n—n type heterojunction enabling highly efficientcarrier separation in inorganic solar cells Gang Li(李刚), Yuqian Huang(黄玉茜), Rongfeng Tang(唐荣风), Bo Che(车波), Peng Xiao(肖鹏), Weitao Lian(连伟涛), Changfei Zhu(朱长飞), and Tao Chen(陈涛). Chin. Phys. B, 2022, 31(3): 038803.
[12]	Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr₂ perovskite solar cells Ying Hu(胡颖), Jiaping Wang(王家平), Peng Zhao(赵鹏), Zhenhua Lin(林珍华), Siyu Zhang(张思玉), Jie Su(苏杰), Miao Zhang(张苗), Jincheng Zhang(张进成), Jingjing Chang(常晶晶), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(3): 038804.
[13]	Surface modulation of halide perovskite films for efficient and stable solar cells Qinxuan Dai(戴沁煊), Chao Luo(骆超), Xianjin Wang(王显进), Feng Gao(高峰), Xiaole Jiang(姜晓乐), and Qing Zhao(赵清). Chin. Phys. B, 2022, 31(3): 037303.
[14]	Nano Ag-enhanced photoelectric conversion efficiency in all-inorganic, hole-transporting-layer-free CsPbIBr₂ perovskite solar cells Youming Huang(黄友铭), Yizhi Wu(吴以治), Xiaoliang Xu(许小亮), Feifei Qin(秦飞飞), Shihan Zhang(张诗涵), Jiakai An(安嘉凯), Huijie Wang(王会杰), and Ling Liu(刘玲). Chin. Phys. B, 2022, 31(12): 128802.
[15]	A silazane additive for CsPbI₂Br perovskite solar cells Ruiqi Cao(曹瑞琪), Yaochang Yue(乐耀昌), Hong Zhang(张弘), Qian Cheng(程倩), Boxin Wang(王博欣), Shilin Li(李世麟), Yuan Zhang(张渊), Shuhong Li(李书宏), and Huiqiong Zhou(周惠琼). Chin. Phys. B, 2022, 31(11): 110101.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III-V compound solar cell

Cite this article:

Online attention