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Chin. Phys. B, 2016, Vol. 25(3): 037701    DOI: 10.1088/1674-1056/25/3/037701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Preparation and characterization of Sr0.5Ba0.5Nb2O6 glass-ceramic on piezoelectric properties

Shan Jiang(姜珊)1, Xuan-Ming Wang(王炫明)2, Jia-Yu Li(李佳宇)3,Yong Zhang(张勇)1, Tao Zheng(郑涛)1, Jing-Wen Lv(吕景文)1
1. Material Science and Engineering Institute, Changchun University of Science and Technology, Changchun 130022, China;
2. Beijing University of Posts and Telecommunications, Beijing 100876, China;
3. China Building Materials Academy, Beijing 100024, China
Abstract  We studied the influence of heat treatment time on the optical, thermal, electrical, and mechanical properties of strontium barium niobate (Sr1-xBaxNb2O6; hereafter SBN) piezoelectric glass-ceramics with tungsten bronze-type structure, which have good piezoelectric properties and are important lead-free piezoelectric materials. We found that the best heat treatment time is 4 h. The properties of the prepared materials are better than that of SBN ceramics and the glass-ceramic growth is faster than the SBN crystal when the heat treatment time of the SBN piezoelectric glass-ceramic is controlled, reducing the preparation costs greatly.
Keywords:  strontium barium niobate      heat treatment time      piezoelectric coefficient      permittivity  
Received:  18 September 2015      Revised:  02 November 2015      Accepted manuscript online: 
PACS:  77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  78.55.Hx (Other solid inorganic materials)  
Corresponding Authors:  Jing-Wen Lv     E-mail:  ljwcc@126.com

Cite this article: 

Shan Jiang(姜珊), Xuan-Ming Wang(王炫明), Jia-Yu Li(李佳宇),Yong Zhang(张勇), Tao Zheng(郑涛), Jing-Wen Lv(吕景文) Preparation and characterization of Sr0.5Ba0.5Nb2O6 glass-ceramic on piezoelectric properties 2016 Chin. Phys. B 25 037701

[1] Shyu J J and Chen C H 2003 J. Ceramics Int. Soc. 29 447
[2] Ding J, Yu J C, Zheng X H, Ni W Q and Chen B 2006 J. Electronic. Components and Materials. Soc. 25 20
[3] Luo J, Du J, Tang Q and Mao C H 2008 J. Electron Devices Soc. 55 3549
[4] Cheng C T, Lanagan M, Jones B, Lin J T and Pan M J 2009 J. Am. Ceramic. Soc. 31 411
[5] Michale J R, Clive A W, Graham J H and Roger M 1996 J. Am. Ceramic. Soc. 79 17
[6] Yao K, Zhang L Y, Yao X and Zhu W G 1997 J. Am. Ceramic. Soc. 32 3659
[7] Jiang S, Wang X M, Li J Y, Zhang Y, Zheng T and Lv J W 2015 J. Chin. Phys. Soc. 24 067701
[8] Du J, Jones B and Lanagan M 2005 J. Mater. Lett. Soc. 59 2821
[9] Reece M J, Worrell C A, Hill G J, et al. 1996 J. Am. Ceram. Soc. 79 17
[10] Cheng C T, Lanagan M, Jones B, et al. 2005 J. Am. Ceram. Soc. 88 3037
[11] Ding J, Yu J C, Zheng X H, et al. 2006 Electronic Components and Materials 25 20
[12] Shi J L and Feng T 2008 Inorganic Optical Transparent Ceramics (1st edn.) (Shanghai: Shanghai Popular Science Press) p. 12 (in Chinese)
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