Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

doi:10.1088/1674-1056/24/4/047302

Abstract Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional (2D) Poisson equation and the Schrödinger equation within the non-equilibrium Green's function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.

Keywords: DG-MOSFET effective oxide thickness non-equilibrium Green's function oxide thickness gate dielectric permittivity

Received: 11 September 2014
Revised: 04 November 2014
Accepted manuscript online:

PACS:	73.23.Ad	(Ballistic transport)
	73.23.-b	(Electronic transport in mesoscopic systems)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.35.-p	(Nanoelectronic devices)

Corresponding Authors: Morteza Charmi
E-mail: charmi@guilan.ac.ir

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Morteza Charmi Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs 2015 Chin. Phys. B 24 047302

[1]	Hu C 1999 Nanotechnology 10 113
[2]	Magnus W and Schoenmaker W 2001 J. Appl. Phys. 88 5833
[3]	Cai J and Sah C T 2001 J. Appl. Phys. 89 2272
[4]	Shih W K, Wang E X, Jallepalli S, Leon F, Maziar C M and Taschjr A F 1998 Solid-State Electronics 42 997
[5]	Frank M M, Kim S B, Brown S L, Bruley J, Copel M, Hopstaken M, Chudzik M and Narayanan V 2009 Microelectronic Engineering 86 1603
[6]	Fu C H, Chang-Liao K S, Chang Y A, Hsu Y Y, Tzeng T H, Wang T K, Heh D W, Gu P Y and Tsai M J 2011 Microelectron. Eng. 88 1309
[7]	Wu M, Alivov Y I and Morkoc H 2008 J Mater Sci: Mater. Electron. 19 915
[8]	Ma Y, Ono Y, Stecker L, Evans D R and Hsu S T 1999 IEEE IEDM 149
[9]	Kuo C S, Hsu J F, Huang S W, et al. 2004 IEEE Electron Dev. 51 854
[10]	Kim Y, Gebara G, Freiler M, et al. 2001 IEEE IEDM 455
[11]	Ernst T, Ritzenthaler R, Faynot O and Cristoloveanu S A 2007 IEEE Trans. Electron Dev. 54 1366
[12]	Tsui B Y and Chin L F 2004 IEEE Trans. Electron Dev. 51 1733
[13]	Charmi M, Mashayekhi H R and Orouj A A 2014 J. Comput. Electron. 13 307
[14]	Liang P, Jiang J and Song Y 2008 J. Phys. D: Appl. Phys. 41 215109
[15]	Venugopal R, Ren Z, Datta S, Lundstrom M S and Jovanovic D 2002 J. Appl. Phys. 92 3730
[16]	Datta S 2000 Superlattices and Microstructures 28 253
[17]	Datta S 2005 Quantum Transport: Atom to Transistor (Cambridge: Cambridge University Press)
[18]	Lundstrom M and Guo J 2006 Nanoscale Transistors: Device Physics Modeling and Simulation (New York: Springer Press)
[19]	Goano M 1993 Solid-State Electronics 36 217
[20]	Venturi F, Smith R K, Sangiorgi E C, Pinto M and Ricco B A 1989 IEEE Trans. Electron Dev. 8 360
[21]	Deleonibus S 2009 Electronic Device Architectures for the Nano CMOS Era From Ultimate CMOS Scaling to Beyond CMOS Devices (Singapore: Pan Stanford Publishing Pte. Ltd.)
[22]	International Technology Roadmap for Semiconductor 2013 edition. Available from http://public.itrs.net

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Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

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