Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

doi:10.1088/1674-1056/25/10/108801

Abstract Performances of Ga- and N-polarity solar cells (SCs) adopting gradient-In-composition intrinsic layer (IL) are compared. It is found the gradient ILs can greatly weaken the negative influence from the polarization effects for the Ga- polarity case, and the highest conversion efficiency (η) of 2.18% can be obtained in the structure with a linear increase of In composition in the IL from bottom to top. This is mainly attributed to the adsorptions of more photons caused by the higher In composition in the IL closer to the p-GaN window layer. In contrast, for the N-polarity case, the SC structure with an InGaN IL adopting fixed In composition prevails over the ones adopting the gradient-In-composition IL, where the highest η of 9.28% can be obtained at x of 0.62. N-polarity SC structures are proven to have greater potential preparations in high-efficient InGaN SCs.

Keywords: InGaN solar cell polarity

Received: 12 April 2016
Revised: 13 June 2016
Accepted manuscript online:

PACS:	88.40.hj	(Efficiency and performance of solar cells)
	81.05.Ea	(III-V semiconductors)
	88.40.jm	(Thin film III-V and II-VI based solar cells)
	84.60.Jt	(Photoelectric conversion)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61306108, 61172131, and 61271377), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. 2013693), and the Anhui Polytechnic University Funds for Excellent Young Scientists, China (Grant No. 2014YQQ005).

Corresponding Authors: Lin Lu
E-mail: LLu-wh@qq.com

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Lin Lu(鲁麟), Ming-Chao Li(李明潮), Chen Lv(吕琛), Wen-Gen Gao(高文根), Ming Jiang(江明), Fu-Jun Xu(许福军), Qi-Gong Chen(陈其工) Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers 2016 Chin. Phys. B 25 108801

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Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

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