Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films

doi:10.1088/1674-1056/25/10/106701

Abstract La_2/3Sr_1/3MnO₃ films are deposited on (001) silicon substrates, in which the silicon surfaces have artificially been treated into the scallops-like, pyramid-like, and smooth polishing structure, by pulsed laser deposition. The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field, and much larger (14.3% for acid-etched, and 42.9% for alkali-etched) than that on the polished Si at 5 K. Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed. Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature, which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law. We believe that the rough surface may be useful in device design.

Keywords: La_2/3Sr_1/3MnO₃ film silicon microstructure magnetoresistance

Received: 24 March 2016
Revised: 25 May 2016
Accepted manuscript online:

PACS:	67.25.dp	(Films)
	73.43.Qt	(Magnetoresistance)
	77.55.df	(For silicon electronics)
	81.65.Cf	(Surface cleaning, etching, patterning)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1332205, 11274153, 11204124, and 51202108).

Corresponding Authors: Xiao-Shan Wu
E-mail: xswu@nju.edu.cn

Cite this article:

Xiao-Min Gu(顾晓敏), Wei Wang(王伟), Guo-Tai Zhou(周国泰), Kai-Ge Gao(高凯歌), Hong-Ling Cai(蔡宏灵), Feng-Ming Zhang(张凤鸣), Xiao-Shan Wu(吴小山) Effects of Si surficial structure on transport properties of La_2/3Sr_1/3MnO₃ films 2016 Chin. Phys. B 25 106701

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Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films

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Effects of Si surficial structure on transport properties of La_2/3Sr_1/3MnO₃ films