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Transient liquid assisted nucleation mechanism of YBa2Cu3O7-δ in coated conductor films derived by BaF2 process |
Gu Zhao-Hui (谷朝辉), Yang Wen-Tao (杨文涛), Bai Chuan-Yi (白传易), Guo Yan-Qun (郭艳群), Lu Yu-Ming (鲁玉明), Liu Zhi-Yong (刘志勇), Lu Qi (路齐), Shu Gang-Qiang (舒刚强), Cai Chuan-Bing (蔡传兵) |
Shanghai Key Laboratory of High Temperature Superconductors, Shanghai 200444, China |
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Abstract It is significant for low-cost preparation of YBa2Cu3O7-δ (YBCO) coated conductors to make clear the mechanism of orientation, copper segregation, and nucleation density in BaF2-derived YBCO crystallization. In the present work, a distinct nucleation mechanism was proposed based on a transient liquid phase induced by the size effect as well as near-equilibrium assumption. With this scheme the nucleation of YBCO prepared by metal-organic deposition (MOD) or the physical vapor deposition BaF2 process was semi-quantitatively analyzed, revealing that the direct driving force for nucleation is YBCO supersaturation in the liquid phase. The theoretical analysis on the nucleation orientation portion is evidenced by the experimental result.
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Received: 09 January 2015
Revised: 30 March 2015
Accepted manuscript online:
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PACS:
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68.55.A-
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(Nucleation and growth)
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64.75.St
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(Phase separation and segregation in thin films)
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Fund: Project supported by the Science and Technology Commission of Shanghai Municipality, China (Grant Nos. 13111102300 and 11dz1100302), the National Natural Science Foundation of China (Grant Nos. 11174193 and 51202141), the National Basic Research Program of China (Grant Nos. 2011CBA00105), and the Science and Technology Commission of Shanghai Municipality, China (Grant No. 14DZ2260700). |
Corresponding Authors:
Cai Chuan-Bing
E-mail: cbcai@staff.shu.edu.cn
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Cite this article:
Gu Zhao-Hui (谷朝辉), Yang Wen-Tao (杨文涛), Bai Chuan-Yi (白传易), Guo Yan-Qun (郭艳群), Lu Yu-Ming (鲁玉明), Liu Zhi-Yong (刘志勇), Lu Qi (路齐), Shu Gang-Qiang (舒刚强), Cai Chuan-Bing (蔡传兵) Transient liquid assisted nucleation mechanism of YBa2Cu3O7-δ in coated conductor films derived by BaF2 process 2015 Chin. Phys. B 24 096805
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