Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

doi:10.1088/1674-1056/24/6/068503

Abstract

The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and AlGaN insertion layers (IL) respectively before the growth of MQWs in metal–organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional tensile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. AlGaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with AlGaN IL were observed in the light images of the LEDs.

Keywords: GaN/InGaN LEDs stress indium composition

Received: 05 December 2014
Revised: 14 January 2015
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	62.40.+i	(Anelasticity, internal friction, stress relaxation, and mechanical resonances)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Corresponding Authors: Zhang Bai-Jun
E-mail: zhbaij@mail.sysu.edu.cn

About author: 85.60.Jb; 62.40.+i; 61.72.-y

Cite this article:

Liu Ming-Gang (柳铭岗), Yang Yi-Bin (杨亿斌), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Lin Xiu-Qi (林秀其), Lin Jia-Li (林佳利), Luo Hui (罗慧), Liao Qiang (廖强), Zang Wen-Jie (臧文杰), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates 2015 Chin. Phys. B 24 068503

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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

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