Progress in bulk GaN growth

doi:10.1088/1674-1056/24/6/066105

Abstract

Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonothermal methods are compared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectroscopy. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.

Keywords: nitride semiconductor bulk GaN hydride vapor phase epitaxy (HVPE) dislocation

Received: 04 May 2015
Revised: 11 May 2015
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	81.05.Ea	(III-V semiconductors)
	81.10.Bk	(Growth from vapor)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61325022 and 11435010), the National Basic Research Program of China (Grant No. 2012CB619305), and the National High Technology Research and Development Program of China (Grant No. 2014AA03260).

Corresponding Authors: Xu Ke
E-mail: kxu2006@sinano.ac.cn

About author: 61.72.uj; 81.05.Ea; 81.10.Bk; 61.72.-y

Cite this article:

Xu Ke (徐科), Wang Jian-Feng (王建峰), Ren Guo-Qiang (任国强) Progress in bulk GaN growth 2015 Chin. Phys. B 24 066105

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