Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

doi:10.1088/1674-1056/24/2/027201

Abstract An obvious weak localization correction to anomalous Hall conductance (AHC) in very thin CoFeB film is reported. We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness. When the film is thicker than 3 nm, the side jump mechanism dominates and the weak localization to AHC vanishes. For very thin CoFeB films, both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect, and the weak localization correction to AHC is observed.

Keywords: anomalous Hall effect weak localization CoFeB thin films

Received: 15 July 2014
Revised: 05 September 2014
Accepted manuscript online:

PACS:	72.15.Rn	(Localization effects (Anderson or weak localization))
	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)
	73.61.At	(Metal and metallic alloys)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 11079052, 11174354, and 51172080).

Corresponding Authors: Zhu Tao
E-mail: tzhu@aphy.iphy.ac.cn

Cite this article:

Ding Jin-Jun (丁进军), Wu Shao-Bing (吴少兵), Yang Xiao-Fei (杨晓非), Zhu Tao (朱涛) Localization correction to the anomalous Hall effect in amorphous CoFeB thin films 2015 Chin. Phys. B 24 027201

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