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Chin. Phys. B, 2014, Vol. 23(8): 087804    DOI: 10.1088/1674-1056/23/8/087804
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 Prev   Next  

Thermal effect of Ge2Sb2Te5 in phase change memory device

Li Jun-Tao (李俊焘)a b, Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Ren Kun (任堃)a b, Zhu Min (朱敏)a b, Xu Jia (徐佳)c, Ren Jia-Dong (任佳栋)c, Feng Gao-Ming (冯高明)c, Ren Wan-Chun (任万春)c, Tong Hao (童浩)c
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, Shanghai 201203, China
Abstract  In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of Ge2Sb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.
Keywords:  phase change memory      Ge2Sb2Te5      thermal effect      failure analysis  
Received:  04 September 2013      Revised:  21 March 2014      Accepted manuscript online: 
PACS:  78.66.Jg (Amorphous semiconductors; glasses)  
  68.35.Np (Adhesion)  
  68.35.Ct (Interface structure and roughness)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), and the Funds from the Science and Technology Council of Shanghai, China (Grant No. 12nm0503701).
Corresponding Authors:  Liu Bo     E-mail:

Cite this article: 

Li Jun-Tao (李俊焘), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Ren Kun (任堃), Zhu Min (朱敏), Xu Jia (徐佳), Ren Jia-Dong (任佳栋), Feng Gao-Ming (冯高明), Ren Wan-Chun (任万春), Tong Hao (童浩) Thermal effect of Ge2Sb2Te5 in phase change memory device 2014 Chin. Phys. B 23 087804

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